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2SK24价格

参考价格：￥1.9500

型号：2SK2401 品牌：TOSHIBA 备注：这里有2SK24多少钱，2025年最近7天走势，今日出价，今日竞价，2SK24批发/采购报价，2SK24行情走势销售排行榜，2SK24报价。

型号	功能描述	生产厂家企业	LOGO
2SK240	LOW NOISE AUDIO AMPLIFIER APPLICATIONS. DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES: • Recommended for first stages of EQ Amplifiers. • High lyfsl lyfsl-22mS (Typ.) (VDS-10V, VGS=0, IDSS=3mA) • Excellent Pair Characteristics : \| VGS1-VGS21- 20mV (Max.) (VDS-10V, ID-1mA) • High Breakdown Voltage: VCDS-40V (Min.) •	TOSHIBA 东芝	TOSHIBA
2SK240	HSTM PACKAGE SERIES Application VHF Amp, FM RF MIX VHF RF Amp, VHF TV Application High lyfs\| Low Noise High lyfst Low Noise High lyfs! Low Noise High lyfs! Low Noise 1 Chip High Yfs! Low Noise 1 Chip High Yfs! Low Noise Application Condenser Microphone Condenser Microphone Condenser Microphone	TOSHIBA 东芝	TOSHIBA
2SK2400	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2400	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) Chopper Regulator, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON resistance : RDS (ON) = 17 Ω (typ.) High forward transfer admittance : \|Yfs\| = 4.5 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 100 V) Enhancement mode : Vth = 0.8 to 2.	TOSHIBA 东芝	TOSHIBA
2SK2401	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON)= 0.13 Ω(typ.) High forward transfer admittance : \|Yfs\| = 17 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 200 V) Enhancement mode : Vth= 1.5 to 3.5 V (VDS= 10 V	TOSHIBA 东芝	TOSHIBA
2SK2401	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2403	General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Built-in FRD. • 10V drive.	SANYO 三洋	SANYO
2SK2403L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2403S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2404L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2404S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2405	General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Built-in FRD. • 10V drive.	SANYO 三洋	SANYO
2SK2405L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2405S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2406	Ultrahigh-Speed Switching, Motor Driver Applications · Low ON-resistance. · Ultrahigh-speed switching. · High-speed diode.	SANYO 三洋	SANYO
2SK2406L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 1A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2406S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 1A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2408	Silicon N Channel MOS FET Features • Low on-resistance • Built-in fast recovery diode (trr = 120 ns typ) • High speed switching • Low drive current • Suitable for switching regulator, motor control Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK2408-E	Silicon N Channel MOS FET Features • Low on-resistance • Built-in fast recovery diode (trr = 120 ns typ) • High speed switching • Low drive current • Suitable for switching regulator, motor control Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK2409	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2409 is N-Channel MOS Field Effect Transistor designed for solenoid, motor, and lamp driver. FEATURES • Low On-Resistance RDS(on) £ 27 mW (VGS = 10 V, ID = 20 A) RDS(on) £ 40 mW (VGS = 4 V, ID = 20 A) • Low Ciss Ciss	RENESAS 瑞萨	RENESAS
2SK2409	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SK2409	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 27mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK241	N CHANNEL MOS TYPE (FM TUNER, VHF AND FR AMPLIFIER APPLICATIONS) FM Tuner, VHF and RF Amplifier Applications Low reverse transfer capacitance: Crss = 0.035 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: GPS = 28dB (typ.) Recommend operation voltage: 5~15 V	TOSHIBA 东芝	TOSHIBA
2SK241	TRANSISTOR 3SK121 datasheet pdf	TOSHIBA 东芝	TOSHIBA
2SK241	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF and RF Amplifier Applications Low reverse transfer capacitance: Crss = 0.035 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: GPS = 28dB (typ.) Recommend operation voltage: 5~15 V	TOSHIBA 东芝	TOSHIBA
2SK241_V01	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF and RF Amplifier Applications Low reverse transfer capacitance: Crss = 0.035 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: GPS = 28dB (typ.) Recommend operation voltage: 5~15 V	TOSHIBA 东芝	TOSHIBA
2SK2410	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2410 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. EATURES • Low On-Resistance RDS(on)1 = 40 mW MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mW MAX. (@ VGS = 4 V, ID = 15 A)	RENESAS 瑞萨	RENESAS
2SK2410	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SK2410	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2411	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2411	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. FEATURES • Low On-Resistance RDS(on)1 = 40 mW MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mW MAX. (@ VGS = 4 V, ID = 15 A)	RENESAS 瑞萨	RENESAS
2SK2411-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. FEATURES • Low On-Resistance RDS(on)1 = 40 mW MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mW MAX. (@ VGS = 4 V, ID = 15 A)	RENESAS 瑞萨	RENESAS
2SK2411-Z	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2412	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 70mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2412	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	RENESAS 瑞萨	RENESAS
2SK2412	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SK2413	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SK2413	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2413 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. FEATURES • Low On-Resistance RDS(on)1 = 70 mW MAX. (@ VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 mW MAX. (@ VGS = 4 V, ID = 5.0	RENESAS 瑞萨	RENESAS
2SK2413	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 70mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2414	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 70mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2414	MOS Field Effect Transistor Features Low On-Resistance RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A) Low Ciss Ciss = 840 pF TYP. Built-in G-S Gate Protection Diodes High Avalanche Capability Ratings	KEXIN 科信电子	KEXIN
2SK2414	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance RDS(on)1 = 70 mΩ MAX. (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 mΩ MAX. (VGS = 4 V, ID = 5.0 A) • Low Ciss: Ci	RENESAS 瑞萨	RENESAS
2SK2414	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SK2414-Z	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SK2414-Z	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 70mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2415	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2415	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SK2415	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET Description The 2SK2415 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. Features • Low on-state resistance RDS(on)1 = 0.10 Ω MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 0.15 Ω MAX. (VGS = 4 V, ID = 4.0 A) • Low	RENESAS 瑞萨	RENESAS
2SK2415-Z	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SK2415-Z	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2417	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2417F	Chopper Regulator, DC?묭C Converter and Motor Drive Applications Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.42 Ω (typ.) High forward transfer admittance : \|Yfs\| = 7.5 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 250 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V,	TOSHIBA 东芝	TOSHIBA
2SK2419	MOSFET Sanken / MOS FET ( 2SK1177 thru 2SK3460)	Sanken 三垦	Sanken
2SK2419	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 22A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 37mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK242	High-Frequency, General-Purpose Amp Applications????????????? Low-Frequency General-Purpose Amplifier Applications Features · Ultrasmall-sized package permitting 2SK242-applied sets to be made small and slim. · Small Crss (Crss=0.04pF typ).	SANYO 三洋	SANYO
2SK2420	MOSFET Sanken / MOS FET ( 2SK1177 thru 2SK3460)	Sanken 三垦	Sanken
2SK2420	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2421	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2421	MOSFET Sanken / MOS FET ( 2SK1177 thru 2SK3460)	Sanken 三垦	Sanken
2SK2422	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi

2SK24产品属性

类型
描述
型号
2SK24
功能描述
TRANSISTOR | JFET | N-CHANNEL | DUAL | 2.6MA I(DSS)

2SK24供应商更多...

更新时间：2025-12-25 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	2SK2498-AZ	NEC	24+	NA/	3550	原装现货,当天可交货,原型号开票	询价
深圳市昌和盛利电子有限公司	2SK2498	NEC	NEW	TO-220F	35890	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
中天科工半导体（深圳）有限公司	2SK2498	NEC	25+	TO-220	20300	NEC原装特价2SK2498即刻询购立享优惠#长期有货	询价
深圳市振宏微科技有限公司	2SK2498	NEC	23+	TO-200F	5000	专做原装正品,假一罚百!	询价
深圳市科恒伟业电子有限公司	2SK2498	SHINDEN	2450+	TO-220	8850	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市华斯顿科技有限公司	2SK2498	NEC	25+23+	TO-220	34015	绝对原装正品全新进口深圳现货	询价
深圳市一线半导体有限公司	2SK2498		24+		60000		询价
深圳市东来宝电子科技有限公司	2SK2498	NEC	24+	TO-220F	8600	郑重承诺只做原装进口现货	询价
洪芯国际半导体（深圳）有限公司	2SK2498	NEC	25+	VQFN24	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
深圳市宇创芯科技有限公司	2SK2498	NEC	24+	TO-220F	9600	原装现货,优势供应,支持实单!	询价

2SK24芯片相关品牌

2SK24规格书下载地址

2SK24参数引脚图相关

2SK24数据表相关新闻

2SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技芯片详细信息 Manufacturer Part Number: 2SK3065 Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: ROHM CO LTD Package Description: ， Reach Compliance Code: compliant ECCN Code: EAR99 Manufacturer:
2021-6-24
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技
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2021-6-24
2SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-12
2SK2698
2SK2698，全新原装当天发货或门市自取0755-82732291.
2019-11-14
2SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-30
2SK1985-01MR
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2019-10-30

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