LOW NOISE AUDIO AMPLIFIER APPLICATIONS. DIFFERENTIAL AMPLIFIER APPLICATIONS.

FEATURES: • Recommended for first stages of EQ Amplifiers. • High lyfsl lyfsl-22mS (Typ.) (VDS-10V, VGS=0, IDSS=3mA) • Excellent Pair Characteristics : | VGS1-VGS21- 20mV (Max.) (VDS-10V, ID-1mA) • High Breakdown Voltage: VCDS-40V (Min.) •

HSTM PACKAGE SERIES

Application VHF Amp, FM RF MIX VHF RF Amp, VHF TV Application High lyfs| Low Noise High lyfst Low Noise High lyfs! Low Noise High lyfs! Low Noise 1 Chip High Yfs! Low Noise 1 Chip High Yfs! Low Noise Application Condenser Microphone Condenser Microphone Condenser Microphone

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON resistance : RDS (ON) = 17 Ω (typ.) High forward transfer admittance : |Yfs| = 4.5 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 100 V) Enhancement mode : Vth = 0.8 to 2.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON)= 0.13 Ω(typ.) High forward transfer admittance : |Yfs| = 17 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 200 V) Enhancement mode : Vth= 1.5 to 3.5 V (VDS= 10 V

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Built-in FRD. • 10V drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Built-in FRD. • 10V drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Ultrahigh-Speed Switching, Motor Driver Applications

· Low ON-resistance. · Ultrahigh-speed switching. · High-speed diode.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N Channel MOS FET

Features • Low on-resistance • Built-in fast recovery diode (trr = 120 ns typ) • High speed switching • Low drive current • Suitable for switching regulator, motor control Application High speed power switching

Silicon N Channel MOS FET

Features • Low on-resistance • Built-in fast recovery diode (trr = 120 ns typ) • High speed switching • Low drive current • Suitable for switching regulator, motor control Application High speed power switching

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2409 is N-Channel MOS Field Effect Transistor designed for solenoid, motor, and lamp driver. FEATURES • Low On-Resistance RDS(on) £ 27 mW (VGS = 10 V, ID = 20 A) RDS(on) £ 40 mW (VGS = 4 V, ID = 20 A) • Low Ciss Ciss

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 27mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

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