SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2411 is N-Channel MOS Field Effect Transistor designed

for high speed switching applications.

FEATURES

• Low On-Resistance

RDS(on)1 = 40 mW MAX. (@ VGS = 10 V, ID = 15 A)

RDS(on)2 = 60 mW MAX. (@ VGS = 4 V, ID = 15 A)

• Low Ciss Ciss = 1500 pF TYP.

• Built-in G-S Gate Protection Diodes

• High Avalanche Capability Ratings