2SK196价格

参考价格:¥0.7150

型号:2SK1960 品牌:NEC 备注:这里有2SK196多少钱,2025年最近7天走势,今日出价,今日竞价,2SK196批发/采购报价,2SK196行情走势销售排行榜,2SK196报价。
型号 功能描述 生产厂家 企业 LOGO 操作

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1960 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and

RENESAS

瑞萨

MOS Field Effect Transistor

Features ● Gate can be driven by 1.5V ● Low ON resistance RDS(on)=0.8 MAX.@VGS=1.5V,ID=0.1A RDS(on)=0.2 MAX.@VGS=4.0V,ID=1.5A

KEXIN

科信电子

High-Frequency Low-Noise Amp Applications???????

High-Frequency Low-Noise Amplifier Applications Features • Adoption of FBET process. • Large | yfs |. • Small Ciss. • Ultralow noise figure. Applications • High-frequency low-noise amplifier applications.

SANYO

三洋

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator • Low drive current Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

DESCRIPTION • Drain Current –ID=12A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Fast Switching Speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Suitable for switching regulator

ISC

无锡固电

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator • Low drive current Application High speed power switching

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator • Low drive current Application High speed power switching

RENESAS

瑞萨

N-channel MOS-FET

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance - Avalanche Proof - Including G-S Zener-Diode > Applications - Motor Control - General Purpose Power Amplifier - DC-DC Converters

Fuji

富士通

N-Channel Enhancement MOSFET

文件:1.00491 Mbytes Page:3 Pages

KEXIN

科信电子

N Channel enhancement MOS FET

NEC

瑞萨

N-Channel Junction Silicon FET High-Frequency Low-Noise Amplifier Applications

ONSEMI

安森美半导体

Silicon N-channel Power F-MOS

Panasonic

松下

isc N-Channel MOSFET Transistor

文件:322.04 Kbytes Page:2 Pages

ISC

无锡固电

2SK196产品属性

  • 类型

    描述

  • 型号

    2SK196

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA

更新时间:2025-12-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FUJI/富士电机
24+
NA/
3313
原装现货,当天可交货,原型号开票
RENESAS(瑞萨)/IDT
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
HITACHI/日立
24+
TO 3P
158311
明嘉莱只做原装正品现货
HITACHI
24+
TO-3P
5000
只做原装正品现货 欢迎来电查询15919825718
RENESAS/瑞萨
22+
SOT-23
20000
只做原装
FUJI
NEW
TO-3P
9516
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
HIT/RENES
25+
TO-3P
45000
HIT/RENES全新现货2SK1968即刻询购立享优惠#长期有排单订
HIT
23+
TO-3P
5000
专做原装正品,假一罚百!
24+
2000
RENESAS/瑞萨
24+
SOT-23
9600
原装现货,优势供应,支持实单!

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