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2SK19价格

参考价格：￥15.6000

型号：2SK1918STR 品牌：HITACHI 备注：这里有2SK19多少钱，2025年最近7天走势，今日出价，今日竞价，2SK19批发/采购报价，2SK19行情走势销售排行榜，2SK19报价。

型号	功能描述	生产厂家企业	LOGO
2SK19	N-CHANNEL SILICON FET	MICRO-ELECTRONICS	MICRO-ELECTRONICS
2SK19	N-CHANNEL SILICON FET	MICRO-ELECTRONICS	MICRO-ELECTRONICS
2SK1900	Very High-Speed Switching Applications Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SK1900-applied equipment. • High density surface mount	SANYO 三洋	SANYO
2SK1900L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1900S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1901	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1902	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.135Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1903	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 25A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.08Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1904	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1904	Very High-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive. • Micaless package facilitating mounting.	SANYO 三洋	SANYO
2SK1905	Very High-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive. • Micaless package facilitating easy mounting.	SANYO 三洋	SANYO
2SK1905	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 135mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1906	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 80mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1906	Very High-Speed Switching Applications Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting.	SANYO 三洋	SANYO
2SK1907	Very High-Speed Switching Applications Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SK1907-applied equipment. • High density surface mount	SANYO 三洋	SANYO
2SK1907L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1907S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1908	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 135mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1908	Very High-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SK1908-applied equipment. • High-density surface mount applications. • Small size of	SANYO 三洋	SANYO
2SK1909	Very High-Speed Switching Applications Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SK1909-applied equipment. • High density surface mount	SANYO 三洋	SANYO
2SK1909S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 25A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 80mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1916-01R	N-CHANNEL SILICON POWER MOS-FET	Fuji 富士通	Fuji
2SK1917	N-CHANNEL SILICON POWER MOSFET?	Fuji 富士通	Fuji
2SK1917-MR	N-CHANNEL SILICON POWER MOSFET?	Fuji 富士通	Fuji
2SK1920	Very High-Speed Switching Applications Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.	SANYO 三洋	SANYO
2SK1920L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 700mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1920S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 700mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1921	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.7Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1921	Very High-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.	SANYO 三洋	SANYO
2SK1922	Very High-Speed Switching Applications Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • High-speed diode (trr=100ns).	SANYO 三洋	SANYO
2SK1922	Fast Switching Speed DESCRIPTION • Drain Current ID= 2A@ TC=25℃ • Drain Source Voltage : VDSS= 600V(Min) • Fast Switching Speed APPLICATIONS • General purpose power amplifier	ISC 无锡固电	ISC
2SK1923	Very High-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • High-speed diode (trr=120ns).	SANYO 三洋	SANYO
2SK1924	Very High-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • High-speed diode (trr=140ns).	SANYO 三洋	SANYO
2SK1925	Very High-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • High-speed diode (trr=150ns).	SANYO 三洋	SANYO
2SK1928	Power MOSFET	Fuji 富士通	Fuji
2SK1928-01R	Power MOSFET	Fuji 富士通	Fuji
2SK1929	HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. Features -Low Drain-Source ON Resistance: RDS(ON)=2.5 (Typ.) -High Forward Transfer Admittance : Yfs=2.0S (Typ.) -Low Leakage Current IDSS=300μA (Max.) (VDS=720V) -Enhancement-Mode : Vth=1.5-3.5V (VDS=10V, ID=1mA)	TOSHIBA 东芝	TOSHIBA
2SK192A	N CHANNEL JUNCTION TYPE (FM TUNER, VHF BAND AMPLIFIER APPLICATIONS) FM Tuner Applications VHF Band Amplifier Applications • High power gain: GPS = 24dB (typ.) (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: \|Yfs\| = 7 mS (typ.) (f = 1 kHz)	TOSHIBA 东芝	TOSHIBA
2SK192A	MINI PACKAGE SERIES Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge	TOSHIBA 东芝	TOSHIBA
2SK193	Field Effect Transistor SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SK1930	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK1930	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) Chopper Regulator, DC−DC Converter, and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) ● High forward transfer admittance : \|Yfs\| = 2.0 S (typ.) ● Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) ● Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID =	TOSHIBA 东芝	TOSHIBA
2SK1931	VR Series Power MOSFET(200V 5A) FEATURES ● Applicable to 4V drive. ● The static Rds(on) is small. ● Built-in ZD for Gate Protection. APPLICATION ● DC/DC converters ● Power supplies of DC 12-24V input ● Product related to ● Integrated Service Digital Network	SHINDENGEN	SHINDENGEN
2SK1931	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.65Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1933	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1933	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1933-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1934	Silicon N Channel MOS FET Features • Low on–resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1934	Silicon N-Channel MOS FET Features • Low on–resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1934	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1934-E	Silicon N Channel MOS FET Features • Low on–resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1936-01	N-CHANNEL SILICON POWER MOS-FET N-channel MOS-FET 500V 0,76W 10A 100W >Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Avalanche Proof >Applications - Switching Regulators - UPS - DC-DC converters	Fuji 富士通	Fuji
2SK1936-1	N-channel MOS-FET N-channel MOS-FET 500V 0,76W 10A 100W >Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Avalanche Proof >Applications - Switching Regulators - UPS - DC-DC converters	Fuji 富士通	Fuji
2SK1937-01	N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier	Fuji 富士通	Fuji
2SK1938	Power MOSFET Power MOSFET(N-channel enhancement mode power MOSFET)	Fuji 富士通	Fuji
2SK1938-01R	Power MOSFET Power MOSFET(N-channel enhancement mode power MOSFET)	Fuji 富士通	Fuji
2SK1939-01	N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier	Fuji 富士通	Fuji
2SK1940	N-channel MOS-FET 600V 0,75W 12A 125W >Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Avalanche Proof	Fuji 富士通	Fuji
2SK1940	isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator ·UPS ·DC-DC converters ·General purpose power amplifier	ISC 无锡固电	ISC
2SK1940-01	N-channel MOS-FET 600V 0,75W 12A 125W >Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Avalanche Proof	Fuji 富士通	Fuji

2SK19产品属性

类型
描述
型号
2SK19
制造商
Panasonic Industrial Company
功能描述
TRANSISTOR

2SK19供应商更多...

更新时间：2025-10-8 16:06:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市金嘉锐电子有限公司	2SK1937	FUJI	2025+	TO-3P	32560	原装优势绝对有货	询价
深圳市金华微盛电子有限公司	2SK1918STR	HITACHI	19+	SOT-263	15868		询价
深圳市东来宝电子科技有限公司	2SK1940-01	FUJI/富士电机	24+	TO-3PF	47186	郑重承诺只做原装进口现货	询价
深圳市鸿昌盛电子科技有限公司	2SK1954-Z-AZ	NEC	2014+		100	公司现货库存	询价
深圳市富利微电子科技有限公司	2SK1958	NEC	24+	SOT-323	33500	全新进口原装现货,假一罚十	询价
深圳市一线半导体有限公司	2SK197		24+		2000		询价
深圳市百诺芯科技有限公司	2SK1999	HITACHI/日立	23+	TO-59	8510	原装正品代理渠道价格优势	询价
深圳市恒创达实业有限公司	2SK1998	TOS	17+	TO-3P	6200		询价
齐创科技(上海,北京,青岛)有限公司	2SK1985	FUJI	23+	TO-220F	5000	原装正品,假一罚十	询价
深圳市科恒伟业电子有限公司	2SK1944-01	FUJITSU/富士通	2450+	TO-247	9850	只做原装正品现货或订货假一赔十!	询价

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2SK2415-Z-E1-AZ找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK2415-Z-E1-AZ Manufacturer Part Number: 2SK2415-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP Package Descriptio
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2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
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2SK19价格

2SK19产品属性

2SK19供应商更多...

2SK19芯片相关品牌

2SK19规格书下载地址

2SK19参数引脚图相关

2SK19数据表相关新闻

2SJ652-1E 绝缘栅场效应管(MOSFET)

2SD882SL-TO92B-P-TG_UTC代理商

2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

2SK1485-T1

2SK1985

2SK1985-01MR

DdatasheetPDF页码索引