Silicon N-Channel MOS FET

Features • Low on–resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator Application High speed power switching

Silicon N Channel MOS FET

Features • Low on–resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Application High speed power switching

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N-Channel MOS FET

• Low on–resistance\n• High speed switching\n• No secondary breakdown\n• Suitable for Switching regulatorApplication\n  High speed power switching;

Transistors>Switching/MOSFETs

isc N-Channel MOSFET Transistor

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Silicon N Channel MOS FET

Features • Low on–resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Application High speed power switching