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2SK18价格
参考价格：￥0.2990
型号：2SK1826 品牌：TOSHIBA 备注：这里有2SK18多少钱，2024年最近7天走势，今日出价，今日竞价，2SK18批发/采购报价，2SK18行情走势销售排行榜，2SK18报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK18 | DIFFERENTIALAMPLIFIERAPPLICATIONS Application MedicalElectronicEquipment VideoPre-Amplifier VHFBandAmplifier | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  |   |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 |  | | |
SiliconNChannelMOSFET *Lowon-resistance *Highspeedswitching *Lowdrivecurrent *Nosecondarybreakdown *Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
FastSwitchingSpeed DESCRIPTION ·DrainCurrentID=4A@TC=25℃ ·DrainSourceVoltage:VDSS=900V(Min) ·FastSwitchingSpeed APPLICATIONS ·HighBreakdownVoltage | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
SiliconNChannelMOSFET *Lowon-resistance *Highspeedswitching *Lowdrivecurrent *Nosecondarybreakdown *Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Lowon-resistance DESCRIPTION •DrainCurrentID=5A@TC=25℃ •DrainSourceVoltage:VDSS=600V(Min) •FastSwitchingSpeed •Lowon-resistance •Forswitchinggregulator,DC-DCConverter APPLICATIONS •Highspeedpowerswitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
High-SpeedSwitchingApplications Features ·LowONresistance. ·Ultrahigh-speedswitching. ·Converters. | SANYOSanyo 三洋三洋电机株式会社 |  | | |
N-CHANNELSILICONPOWERMOS-FET Features Highcurrent Lowno-resistance Nosecondarybreakdown Lowdrivingpower HighforwardTransconductance Appllcations Motorcontrollers Genaralpurposepoweramplifier DC-DCconverters | FujiFUJI CORPORATION 株式会社ＦＵＪＩ |  | | |
N-channelMOS-FET >Features -HighCurrent -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighForwardTransconductance >Applications -MotorControl -GeneralPurposePowerAmplifier -DC-DCconverters | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
N-channelMOS-FET >Features -HighCurrent -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighForwardTransconductance >Applications -MotorControl -GeneralPurposePowerAmplifier -DC-DCconverters | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
N-CHANNELENHANCEMENTTYPEMOSFET Features ●Includefastrecoverydiode ●Highvoltage ●Lowdrivingpower Applications ●Motorcontrollers ●Inverters ●Choppors | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
N-CHANNELENHANCEMENTTYPEMOSFET Features ●Includefastrecoverydiode ●Highvoltage ●Lowdrivingpower Applications ●Motorcontrollers ●Inverters ●Choppors | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
N-CHANNELENHANCEMENTTYPEMOSFET Features ●Includefastrecoverydiode ●Highvoltage ●Lowdrivingpower ●Avalanche-proof Applications ●Motorcontrollers ●Converters ●Choopors | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
N-channelMOS-FET >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
N-channelMOS-FET >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
N-channelMOS-FET >Features -HighCurrent -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighForwardTransconductance -AvalancheProof -IncludingG-SZener-Diode >Applications -MotorControl -GeneralPurposePowerAmplifier -DC-DCConverters | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
N-CHANNELSILICONPOWERMOSFET? ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
N-CHANNELMOSFETFORSWITCHING SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
MOSFIELDEFFECTTRANSISTOR N-CHANNELMOSFET FORSWITCHING DESCRIPTION The2SK1824isaN-channelverticaltypeMOSFETthatisdrivenat 2.5V. BecausethisMOSFETcanbedrivenonalowvoltageandbecauseit isnotnecessarytoconsiderthedrivecurrent,the2SK1824isidealfor drivingtheactuatorofpower-s | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NCHANNELMOSTYPE(HIGHSPEEDSWITCHING,ANALOGSWITCHAPPLICATIONS) HighSpeedSwitchingApplications AnalogSwitchApplications •4Vgatedrive •Lowthresholdvoltage:Vth=0.8~2.5V •Highspeed •Enhancement-mode •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
NCHANNELMOSTYPE(HIGHSPEEDSWITCHING,ANALOGSWITCHAPPLICATIONS) HighSpeedSwitchingApplications AnalogSwitchApplications •4Vgatedrive •Lowthresholdvoltage:Vth=0.8~2.5V •Highspeed •Enhancement-mode •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
NCHANNELMOSTYPE(HIGHSPEEDSWITCHING,ANALOGSWITCHAPPLICATIONS) HighSpeedSwitchingApplications AnalogSwitchApplications •4Vgatedrive •Lowthresholdvoltage:Vth=0.8~2.5V •Highspeed •Enhancement-mode •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
NCHANNELMOSTYPE(HIGHSPEEDSWITCHING,ANALOGSWITCHAPPLICASTIONS) HighSpeedSwitchingApplications AnalogSwitchApplications •2.5Vgatedrive •Lowthresholdvoltage:Vth=0.5~1.5V •Highspeed •Enhancement-mode •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
MOSFieldEffectTransistor ■Features ●VDS(V)=20V ●ID=50mA ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | | |
NCHANNELMOSTYPE(HIGHSPEEDSWITCHING,ANALOGSWITCHAPPLICATIONS) HighSpeedSwitchingApplications AnalogSwitchApplications •2.5Vgatedrive •Lowthresholdvoltage:Vth=0.5~1.5V •Highspeed •Enhancement-mode •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
NCHANNELMSTYPE(HIGHSPEEDSWITCHING,ANALOGSWITCHAPPLICATIONS) HIGHSPEEDSWITCHINGAPPLICATIONS ANALOGSWITCHAPPLICATIONS •2.5VGateDrive •LowThresholdVoltage:Vth=0.5~1.5V •HighSpeed •Enhancement-Mode •SmallPackage | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
SiliconN-ChannelMOSFET Application Highspeedpowerswitching •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconN-ChannelMOSFET Application Highspeedpowerswitching •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Features •Highbreakdownvoltage(VDSS=1500V) •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
iscN-ChannelMOSFETTransistor ·FEATURES ·Lowdrain-sourceon-resistance: RDS(ON)7.0Ω(max) ·Enhancementmode: VGS(th)=2.0to4.0V(VDS=10V,ID=0.25mA) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·DESCRITION ·SwitchingVoltageRegulators | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconN-ChannelMOSFET Features •Highbreakdownvoltage(VDSS=1500V) •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Features •Highbreakdownvoltage(VDSS=1500V) •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconN-ChannelMOSFET •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET Features Lowon-resistance Highspeedswitching Lowdrivecurrent Nosecondarybreakdown Suitableforswitchingregulator,DC-DCconverter | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
AnalogSwitchApplications AnalogSwitchApplications Features ·Ultrasmall-sizedpackagepermitting2SK1839-appliedsetstobemadesmallandslim. ·Large|yfs| ·Enhancementtype. ·LowONresistance. | SANYOSanyo 三洋三洋电机株式会社 | | | |
NCHANNELJUNCTIONTYPE(LOWNOISEAUDIOAMPLIFIERAPPLICATIONS) LowNoiseAudioAmplifierApplications •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Lownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5mA,f=1kHz,RG=1kΩ) •Highinputimpedance:IGSS=−1nA(max)(VGS=−30V) •S | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
LowNoiseAudioAmplifierApplications LowNoiseAudioAmplifierApplications •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Lownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5mA,f=1kHz,RG=1kΩ) •Highinputimpedance:IGSS=−1nA(max)(VGS=−30V) •S | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBAFieldEffectTransistorSiliconNChannelJunctionType LowNoiseAudioAmplifierApplications •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Lownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5mA,f=1kHz,RG=1kΩ) •Highinputimpedance:IGSS=−1nA(max)(VGS=−30V) •S | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
MINIPACKAGESERIES Application GeneralPurpose> LowNoise HighVoltage HighCurrent HighCurrent LowImpedanceLowNoise(NEW AudioDrive&Out NEW HighB Muting&SW FMRF,MIXOSC AMCONV.FM/AMIF AMFF,CONVIF FM/AMRF,MIXOSC Application GeneralPurpose HighIYfslLowNoise AnalogSW&Ge | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
AnalogSwitchApplications AnalogSwitchApplications Features ·Ultrasmall-sizedpackagepermitting2SK1839-appliedsetstobemadesmallandslim. ·Large|yfs| ·Enhancementtype. ·LowONresistance. | SANYOSanyo 三洋三洋电机株式会社 | | | |
VeryHigh-SpeedSwitching,AnalogSwitchApplications Ultrahigh-SpeedSwitching,AnalogSwitchApplications Features •Large|yfs|. •Enhancementtype. •LowONresistance. | SANYOSanyo 三洋三洋电机株式会社 | | | |
SiliconN-ChannelJunctionFET Forimpedanceconversioninlowfrequency Forinfraredsensor ■Features ●Lowgatetosourceleakagecurrent,IGSS ●SmallcapacitanceofCiss,Coss,Crss ●Mini-typepackage,allowingdownsizingofthesetsandautomaticinsertionthroughthetape/magazinepacking. | PanasonicPanasonic Corporation 松下松下电器 |  | | |
VeryHigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features •LowONresistance. •Ultrahigh-speedswitching. •Low-voltagedrive. | SANYOSanyo 三洋三洋电机株式会社 | | |
2SK18产品属性
- 类型
描述
- 型号
2SK18
- 制造商
Renesas Electronics Corporation
- 功能描述
900V NCHANEL MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
24+ |
TO 3PL |
158513 |
明嘉莱只做原装正品现货 |
|||
RENESAS(瑞萨)/IDT |
23+ |
TO-3P |
300 |
全新、原装 |
|||
TOSHIBA |
16+ |
SSM |
44590 |
原装现货假一罚十 |
|||
NEC |
22+ |
SOT523 |
600000 |
航宇科工半导体-央企优秀战略合作伙伴! |
|||
TOSHIBA/东芝 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
TOSHIBA/东芝 |
23+ |
SOT-323 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
Renesas |
21+ |
LQFP48 |
30 |
全新原装 鄙视假货15118075546 |
|||
SANYO/三洋 |
24+ |
SOT23 |
45000 |
热卖优势现货 |
|||
PANASONI |
06+ |
SOT-23 |
220 |
公司原装现货 |
|||
TOSHIBA |
2024+ |
SOT-523 |
32560 |
原装优势绝对有货 |
2SK18芯片相关品牌
2SK18规格书下载地址
2SK18参数引脚图相关
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- 5000
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- 2SK1824
- 2SK1821
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- 2SK1772
- 2SK1771
- 2SK1767
- 2SK1766
- 2SK1764KY
- 2SK1764
- 2SK1762
- 2SK1761
- 2SK1760
- 2SK176
- 2SK1749
- 2SK1748-Z-E2
- 2SK1748
- 2SK1745
- 2SK1741
- 2SK1740-4
- 2SK1726-TD
- 2SK1724
- 2SK1719
- 2SK1697EY
- 2SK1658
- 2SK1657
- 2SK1646
- 2SK160A
- 2SK160
- 2SK1593
- 2SK1592
- 2SK1591
- 2SK1589
- 2SK1587
2SK18数据表相关新闻
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