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2SK176价格

参考价格:¥0.7800

型号:2SK1764KY 品牌:HITACHI 备注:这里有2SK176多少钱,2026年最近7天走势,今日出价,今日竞价,2SK176批发/采购报价,2SK176行情走势销售排行榜,2SK176报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SK176

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Application High speed power switching

HITACHIHitachi Semiconductor

日立日立公司

2SK176

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.7Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK176

Silicon N-Channel MOS FET

•  Low on-resistance\n•  High speed switching\n•  Low drive current\n•  No secondary breakdown\n•  Suitable for switchingregulator, DC-DC converterApplication\n  High speed power switching;

HITACHIHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5.0A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

RENESAS

瑞萨

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Application High speed power switching

HITACHIHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter

RENESAS

瑞萨

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter

RENESAS

瑞萨

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2.5A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2.5A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Silicon N Channel MOS FET

Application • Low frequency amplifier • High speed switching Features • Low on-resistance • High speed switching • 4 V Gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter

RENESAS

瑞萨

Silicon N-Channel MOS FET

Application Low frequency amplifier High speed switching Features • Low on-resistance • High speed switching • 4 V Gate drive device can be driven from 5 V source • Suitable for switchingregulator, DC-DC converter

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Application • Low frequency amplifier • High speed switching Features • Low on-resistance • High speed switching • 4 V Gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter

RENESAS

瑞萨

Silicon N Channel MOS FET

Application • Low frequency amplifier • High speed switching Features • Low on-resistance • High speed switching • 4 V Gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter

RENESAS

瑞萨

Field Effect Transistor Silicon N Channel MOS Type

Features • Low Drain-Source ON Resistance - ROS(ON) = 3.002 (Typ.) • High Forward Transfer Admittance - Ysl = 1.5S (Typ.) • Low Leakage Current - loss = 300μA (Max.) @ VDs= 600V • Enhancement-Mode - Vth = 2.0 ~ 4.0V @ Vos= 10V, b= 1mA

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:324.93 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:306.04 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFETs

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:296.74 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFETs

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:398.31 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:379.06 Kbytes Page:2 Pages

ISC

无锡固电

Fast Switching Speed

文件:45.41 Kbytes Page:2 Pages

ISC

无锡固电

Fast Switching Speed

文件:52.17 Kbytes Page:2 Pages

ISC

无锡固电

Field Effect Transistor Silicon N Channel MOS Type ¢-MOS 111.5)

文件:295.41 Kbytes Page:6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:342.34 Kbytes Page:2 Pages

ISC

无锡固电

2SK176产品属性

  • 类型

    描述

  • 封装类型:

    TO-220AB

  • Nch/Pch:

    Nch

  • 通道数:

    Single

  • 配置[器件]:

    Built-In SBD

  • VDSS (V) 最大值:

    250

  • ID (A):

    12

  • RDS (ON)(mΩ) 最大值@10V或8V:

    350

  • Ciss (pF) 典型值:

    1100

  • Vgs (off) (V) 最大值:

    3

  • VGSS (V):

    30

  • Pch (W):

    75

  • 应用:

    Industrial

  • 安装类型:

    Through Hole

更新时间:2026-5-20 17:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI/日立
25+
SOT-89
33500
全新进口原装现货,假一罚十
RENESAS
25+
710
公司现货库存
RENESAS/瑞萨
2025+
SOT-89
5000
原装进口价格优 请找坤融电子!
RENESAS
19+
SOT-89
10000
RENESAS
26+
SOT-89
360000
进口原装现货
Renesas(瑞萨)
24+
标准封装
7078
支持大陆交货,美金交易。原装现货库存。
TOSHIBA/东芝
25+
TO-252/251
45000
TOSHIBA/东芝全新现货2SK1769即刻询购立享优惠#长期有排单订
RENESAS/瑞萨
20+
SOT-89
120000
原装正品 可含税交易
HITACHI
25+
TO-252
6500
十七年专营原装现货一手货源,样品免费送

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