| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK1761 | Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SK1761 | Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | | |
2SK1761 | isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
2SK1761 | Power MOSFETs | RENESAS 瑞萨 | | |
2SK1761 | isc N-Channel MOSFET Transistor 文件：306.04 Kbytes Page：2 Pages | ISC 无锡固电 | | |
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | |
2SK1761产品属性
- 类型
描述
- 封装类型：
TO-220AB
- Nch/Pch：
Nch
- 通道数：
Single
- 配置[器件]：
Built-In SBD
- VDSS (V) 最大值：
250
- ID (A)：
12
- RDS (ON)(mΩ) 最大值@10V或8V：
350
- Ciss (pF) 典型值：
1100
- Vgs (off) (V) 最大值：
3
- VGSS (V)：
30
- Pch (W)：
75
- 应用：
Industrial
- 安装类型：
Through Hole
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
23+ |
SOD27 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
24+ |
2000 |
||||||
HITACHI |
20+ |
TO-220 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
HITACHI/日立 |
2022+ |
TO-220AB |
12888 |
原厂代理 终端免费提供样品 |
2SK1761规格书下载地址
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DdatasheetPDF页码索引
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