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2SK17价格
参考价格：￥0.9750
型号：2SK1719 品牌：TOSHIBA 备注：这里有2SK17多少钱，2024年最近7天走势，今日出价，今日竞价，2SK17批发/采购报价，2SK17行情走势销售排行榜，2SK17报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FET,SiliconNChannelJunctionType(forLowNoiseAudioAmplifier) LowNoiseAudioAmplifierApplications •RecommendedforfirststagesofEQandM.C.headamplifiers. •High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) •Highbreakdownvoltage:VGDS=−40V •Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) •High | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  |   | |
LowNoiseAudioAmplifierApplications LowNoiseAudioAmplifierApplications •RecommendedforfirststagesofEQandM.C.headamplifiers. •High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) •Highbreakdownvoltage:VGDS=−40V •Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) •High | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
LowNoiseAudioAmplifierApplications LowNoiseAudioAmplifierApplications •RecommendedforfirststagesofEQandM.C.headamplifiers. •High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) •Highbreakdownvoltage:VGDS=−40V •Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) •High | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
LowNoiseAudioAmplifierApplications LowNoiseAudioAmplifierApplications •RecommendedforfirststagesofEQandM.C.headamplifiers. •High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) •Highbreakdownvoltage:VGDS=−40V •Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) •High | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
LowNoiseAudioAmplifierApplications LowNoiseAudioAmplifierApplications •RecommendedforfirststagesofEQandM.C.headamplifiers. •High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) •Highbreakdownvoltage:VGDS=−40V •Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) •High | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
LowNoiseAudioAmplifierApplications LowNoiseAudioAmplifierApplications •RecommendedforfirststagesofEQandM.C.headamplifiers. •High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) •Highbreakdownvoltage:VGDS=−40V •Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) •High | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
LowNoiseAudioAmplifierApplications LowNoiseAudioAmplifierApplications •RecommendedforfirststagesofEQandM.C.headamplifiers. •High|Yfs|:|Yfs|=22mS(typ.)(VDS=10V,VGS=0,IDSS=3mA) •Highbreakdownvoltage:VGDS=−40V •Lownoise:En=0.95nV/Hz1/2(typ.)(VDS=10V,ID=1mA,f=1kHz) •High | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
MOSFET Sanken/MOSFET(2SK1177thru2SK3460) | SankenSanken Electric Co Ltd. 三垦日本三垦 |  | | |
N-Channel60-V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitchesforPortableDevices | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
TOSHIBAFIELDEFFECTTRANSISTORSILICONNCHANNELMOSTYPE HIGHSPEED,HIGHCURRENTSWITCHINGAPPLICATIONS CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
FastSwitchingSpeed DESCRIPTION ·DrainCurrentID=12A@TC=25℃ ·DrainSourceVoltage:VDSS=600V(Min) ·FastSwitchingSpeed APPLICATIONS ·Powersupplies,convertersandpowermotorcontrols | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
VeryHigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features •LowONresistance. •Ultrahigh-speedswitching. •Low-voltagedrive. | SANYOSanyo 三洋三洋电机株式会社 |  | | |
VeryHigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features •LowONresistance. •Ultrahigh-speedswitching. •Low-voltagedrive. •Meetsradialtaping. | SANYOSanyo 三洋三洋电机株式会社 | | | |
VeryHigh-SpeedSwitchingApplications N-ChannelSiliconMOSFET Features ·LowONresistance. ·Ultrahigh-speedswitching. ·Low-voltagedrive. | SANYOSanyo 三洋三洋电机株式会社 | | | |
VeryHigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features •LowONresistance. •Ultrahigh-speedswitching. •Low-voltagedrive. •Meetsradialtaping. | SANYOSanyo 三洋三洋电机株式会社 | | | |
VeryHigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features •LowONresistance. •Ultrahigh-speedswitching. •Low-voltagedrive. | SANYOSanyo 三洋三洋电机株式会社 | | | |
VeryHigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features •LowONresistance. •Ultrahigh-speedswitching. •Low-voltagedrive. •Meetsradialtaping. | SANYOSanyo 三洋三洋电机株式会社 | | | |
VeryHigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features •LowONresistance. •Ultrahigh-speedswitching. •Low-voltagedrive. •Meetsradialtaping. | SANYOSanyo 三洋三洋电机株式会社 | | | |
VeryHigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features •LowONresistance. •Ultrahigh-speedswitching. •Low-voltagedrive. •Itsheightonboardis9.5mm. •Meetsradialtaping. | SANYOSanyo 三洋三洋电机株式会社 | | | |
VeryHigh-SpeedSwitchingApplications ·LowONresistance. ·Ultrahigh-speedswitching. ·Low-voltagedrive. ·Itsheightonboardis9.5mm. ·Meetsradialtaping. | SANYOSanyo 三洋三洋电机株式会社 | | | |
VeryHigh-SpeedSwitchingApplications ·LowONresistance ·Ultrahigh-speedswitching. ·Low-voltagedrive. ·Meetsradialtaping. | SANYOSanyo 三洋三洋电机株式会社 | | | |
VeryHigh-SpeedSwitchingApplications ·LowONresistance. ·Ultrahigh-speedswitching. ·Low-voltagedrive. ·Itsheightonboardis9.5mm. ·Meetsradialtaping. | SANYOSanyo 三洋三洋电机株式会社 | | | |
VeryHigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features •LowONresistance. •Ultrahigh-speedswitching. •Low-voltagedrive. •Itsheightonboardis9.5mm. •Meetsradialtaping. | SANYOSanyo 三洋三洋电机株式会社 | | | |
VeryHigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features •LowONresistance. •Ultrahigh-speedswitching. •Low-voltagedrive. | SANYOSanyo 三洋三洋电机株式会社 | | | |
VeryHigh-SpeedSwitchingApplications ·LowONresistance. ·Ultrahigh-speedswitching. ·Low-voltagedrive. ·Itsheightonboardis9.5mm. ·Meetsradialtaping. ReferencePDF:http://datasheet.ecgoo.net:81/2/2S/2SK1737.pdf | SANYOSanyo 三洋三洋电机株式会社 | | | |
VeryHigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features •LowONresistance. •Ultrahigh-speedswitching. •Low-voltagedrive. •Itsheightonboardis9.5mm. •Meetsradialtaping. | SANYOSanyo 三洋三洋电机株式会社 | | | |
NCHANNELMOSTYPE(RFPOWERMOSFETforUHFTVBROADCASTTRANSMITTER) RFPOWERMOSFETforUHFTVBROADCASTTRANSMITTER ●OutputPower:Po≥90W(Min.) ●DrainEfficiency:ηD=50(Typ.) ●Frequency:f=770MHz ●Push−PullStructurePackage | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
FIELDEFFECTTRANSISTORSILICONNCHANNELMOSTYPERFPOWERMOSFETforUHFTVBROADCASTTRANSMITTER RFPOWERMOSFETforUHFTVBROADCASTTRANSMITTER ●OutputPower:Po≥90W(Min.) ●DrainEfficiency:ηD=50(Typ.) ●Frequency:f=770MHz ●Push−PullStructurePackage | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
RFPOWERMOSFETforUHFTVBROADCASTTRANSMITTER RFPOWERMOSFETforUHFTVBROADCASTTRANSMITTER ●OutputPower:Po≥90W(Min.) ●DrainEfficiency:ηD=50(Typ.) ●Frequency:f=770MHz ●Push−PullStructurePackage | SANYOSanyo 三洋三洋电机株式会社 | | | |
HFAmplifiersLow-FrequencyAmplifiersAnalogSwitches HFAmplifiersLow-FrequencyAmplifiersAnalogSwitches Features •AdoptionofFBETprocess. •Large|yfs|. •SmallCiss •Small-sizedpackagepermitting2SK1740-appliedsetstobemadesmallandslim. | SANYOSanyo 三洋三洋电机株式会社 | | | |
2SK1741 Forultrahighspeedswitching Features ・Lowonresistance,ultrahighspeedswitching,converter. | SANYOSanyo 三洋三洋电机株式会社 | | | |
2SK1745 2SK1745 | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
FastSwitchingSpeed DESCRIPTION •DrainCurrentID=18A@TC=25℃ •DrainSourceVoltage :VDSS=500V(Min) •FastSwitchingSpeed APPLICATIONS •Powersupplies,convertersandpowermotorcontrols | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
HIGHSPEED,HIGHCURRENTSWITCHINGAPPLICATIONS.DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS. Features -LowDrain-SourceONResistance:RDS(ON)=3.0(Typ.) -HighForwardTransferAdmittance:[Yfs=1.5S(Typ.) -LowLeakageCurrentIDSS=300μA(Max.)@VDS-600V -Enhancement-Mode:Vth=2.0-4.0V@VDS=10V,ID=1mA | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
MOSFIELDEFFECTPOWERTRANSISTORS SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTPOWERTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTPOWERTRANSISTORS SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTPOWERTRANSISTORS SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTPOWERTRANSISTORS SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTPOWERTRANSISTORS SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTPOWERTRANSISTORS SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTPOWERTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 |  | | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTPOWERTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Application •Lowfrequencyamplifier •Highspeedswitching Features •Lowon-resistance •Highspeedswitching •4VGatedrivedevicecanbedrivenfrom5Vsource •Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET Application Lowfrequencyamplifier Highspeedswitching Features •Lowon-resistance •Highspeedswitching •4VGatedrivedevicecanbedrivenfrom5Vsource •Suitableforswitchingregulator,DC-DCconverter | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Application •Lowfrequencyamplifier •Highspeedswitching Features •Lowon-resistance •Highspeedswitching •4VGatedrivedevicecanbedrivenfrom5Vsource •Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Application •Lowfrequencyamplifier •Highspeedswitching Features •Lowon-resistance •Highspeedswitching •4VGatedrivedevicecanbedrivenfrom5Vsource •Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
FieldEffectTransistorSiliconNChannelMOSType Features •LowDrain-SourceONResistance -ROS(ON)=3.002(Typ.) •HighForwardTransferAdmittance -Ysl=1.5S(Typ.) •LowLeakageCurrent -loss=300μA(Max.)@VDs=600V •Enhancement-Mode -Vth=2.0~4.0V@Vos=10V,b=1mA | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
N-CHANNELMOSTYPE(FMTUNER,VHFRFAMPLIFIERAPPLICATIONS) FMTuner,VHFRFAmplifierApplications •Superiorintermodulationperformance. •Lownoisefigure:NF=1.0dB(typ.) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
2SK17产品属性
- 类型
描述
- 型号
2SK17
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
23+ |
NA/ |
18570 |
原装现货,当天可交货,原型号开票 |
|||
ONSEMI/安森美 |
23+ |
SOT-23 |
54258 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
SANYO |
21+ |
SOT23 |
3000 |
原装现货假一赔十 |
|||
SANYO/三洋 |
2022 |
SOT-89 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
Panasonic/松下 |
2008++ |
SOT-23 |
9200 |
新进库存/原装 |
|||
2022 |
13 |
原厂原装正品,价格超越代理 |
|||||
SANYO/三洋 |
SOT-89 |
265209 |
假一罚十原包原标签常备现货! |
||||
SANYO-三洋 |
24+25+/26+27+ |
SOT-23.贴片 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
SANYO |
05+ |
SOT23 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
2SK17芯片相关品牌
2SK17规格书下载地址
2SK17参数引脚图相关
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- 2SK1579
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2SK17数据表相关新闻
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2019-10-30
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