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2SK14价格
参考价格:¥0.7800
型号:2SK1467 品牌:SANYO 备注:这里有2SK14多少钱,2025年最近7天走势,今日出价,今日竞价,2SK14批发/采购报价,2SK14行情走势销售排行榜,2SK14报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 300V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.7Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | |||
Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | |||
Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 300V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | |||
Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | |||
Fast Switching Speed DESCRIPTION • Drain Current –ID= 4A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Fast Switching Speed APPLICATIONS • Designed for high voltage, high speed power switching | ISC 无锡固电 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | |||
Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | |||
Fast Switching Speed DESCRIPTION • Drain Current ID= 8A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Fast Switching Speed APPLICATIONS • Switching regulator and DC-DC converter | ISC 无锡固电 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | |||
Silicon N-Channel MOS FET • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast diode (trr = 140 ns) • Suitable for motor control, switching regulator, DC-DC converter Application • High speed power switching | RENESAS 瑞萨 | |||
Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast diode (trr = 140 ns) • Suitable for motor control, switching regulator, DC-DC converter Application • High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Built-in fast diode (trr = 140 ns) • Suitable for motor control, switching regulator, DC-DC converter Application • High speed power switching | RENESAS 瑞萨 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 16A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
Ultrahigh-Speed Switching Applications Features · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting. | SANYO 三洋 | |||
High-Voltage High-Speed Switching Applications Features 1. Low ON resistance, low input capacitance, very high-speed switching. 2. High reliaility(Adoption of HVP process). 3. Micaless package facilitating mouting. | SANYO 三洋 | |||
Ultrahigh-Speed Switching Applications Features · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting. | SANYO 三洋 | |||
Ultrahigh-Speed Switching Applications 1. Low ON-resistance, low input capacitance. 2. Ultrahigh-speed switching. 3. High reliability (Adoption of HVP process). 4. Micaless package facilitating mounting. | SANYO 三洋 | |||
High-Voltage High-Speed Switching Applications · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting. | SANYO 三洋 | |||
High-Voltage High-Speed Switching Applications Ultrahigh-Speed Switching Applications Features • Low ON resistance, low input capacitance, Ultrahigh-speed switching. • High reliability (Adoption of HVP process). | SANYO 三洋 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 80mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 25A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 45mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
Very High-Speed Switching Applications Ultrahigh-Speed Switching Applications Features • Low ON-state resistance. • Ultrahigh-speed switching. • Converters. | SANYO 三洋 | |||
Very High-Speed Switching Applications Ultrahigh-Speed Switching Applications Features • Low ON-state resistance. • Ultrahigh-speed switching. • Converters. | SANYO 三洋 | |||
Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. | SANYO 三洋 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 26mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. | SANYO 三洋 | |||
Very High-Speed Switching Applications Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Converters. • Micaless package facilitating mounting. | SANYO 三洋 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 80mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 25A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 45mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
Very High-Speed Switching Applications Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating mounting. | SANYO 三洋 | |||
Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating mounting. | SANYO 三洋 | |||
Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating mounting. | SANYO 三洋 | |||
Very High-Speed Switching Applications Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating mounting. | SANYO 三洋 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 26mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 26mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
Very High-Speed Switching Applications Ultrahigh-Speed Switching Applications · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. | SANYO 三洋 | |||
Very High-Speed Switching Applications Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. | SANYO 三洋 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 80A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 16mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.026Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |
2SK14产品属性
- 类型
描述
- 型号
2SK14
- 制造商
Renesas Electronics Corporation
- 功能描述
TRANS MOSFET N-CH 300V 7A 3PIN TO-220AB - Rail/Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC/RENESAS |
24+ |
NA/ |
18250 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
NEC |
24+ |
SOT89 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC/RENESAS |
22+ |
SOT89 |
100000 |
代理渠道/只做原装/可含税 |
|||
NEC |
24+ |
SOT89 |
96000 |
公司大量原装现货,欢迎来电 |
|||
NEC |
22+ |
SOT89 |
20000 |
公司只有原装 品质保证 |
|||
NEC |
21+ |
SOT89 |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
NEC |
25+ |
SOT89 |
860000 |
明嘉莱只做原装正品现货 |
|||
NEC |
25+ |
SOT-89 |
2000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
2SK1483-T2 |
25+ |
30500 |
30500 |
2SK14芯片相关品牌
2SK14规格书下载地址
2SK14参数引脚图相关
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2SK14数据表相关新闻
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2023-2-82SK1485-T1
2SK1485-T1,当天发货0755-82732291全新原装现货或门市自取.
2020-9-122SK1985
2SK1985,全新原装当天发货或门市自取0755-82732291.
2019-10-302SK1985-01MR
2SK1985-01MR,全新原装当天发货或门市自取0755-82732291.
2019-10-30
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