2SK14价格

参考价格:¥0.7800

型号:2SK1467 品牌:SANYO 备注:这里有2SK14多少钱,2025年最近7天走势,今日出价,今日竞价,2SK14批发/采购报价,2SK14行情走势销售排行榜,2SK14报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 300V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.7Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

RENESAS

瑞萨

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 300V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

RENESAS

瑞萨

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

RENESAS

瑞萨

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Fast Switching Speed

DESCRIPTION • Drain Current –ID= 4A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Fast Switching Speed APPLICATIONS • Designed for high voltage, high speed power switching

ISC

无锡固电

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Fast Switching Speed

DESCRIPTION • Drain Current ID= 8A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Fast Switching Speed APPLICATIONS • Switching regulator and DC-DC converter

ISC

无锡固电

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N-Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • Built-in fast diode (trr = 140 ns) • Suitable for motor control, switching regulator, DC-DC converter Application • High speed power switching

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • Built-in fast diode (trr = 140 ns) • Suitable for motor control, switching regulator, DC-DC converter Application • High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • Built-in fast diode (trr = 140 ns) • Suitable for motor control, switching regulator, DC-DC converter Application • High speed power switching

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 16A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Ultrahigh-Speed Switching Applications

Features · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting.

SANYO

三洋

High-Voltage High-Speed Switching Applications

Features 1. Low ON resistance, low input capacitance, very high-speed switching. 2. High reliaility(Adoption of HVP process). 3. Micaless package facilitating mouting.

SANYO

三洋

Ultrahigh-Speed Switching Applications

Features · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting.

SANYO

三洋

Ultrahigh-Speed Switching Applications

1. Low ON-resistance, low input capacitance. 2. Ultrahigh-speed switching. 3. High reliability (Adoption of HVP process). 4. Micaless package facilitating mounting.

SANYO

三洋

High-Voltage High-Speed Switching Applications

· Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting.

SANYO

三洋

High-Voltage High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance, low input capacitance, Ultrahigh-speed switching. • High reliability (Adoption of HVP process).

SANYO

三洋

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 80mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 25A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 45mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-state resistance. • Ultrahigh-speed switching. • Converters.

SANYO

三洋

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-state resistance. • Ultrahigh-speed switching. • Converters.

SANYO

三洋

Ultrahigh-Speed Switching Applications

Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters.

SANYO

三洋

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 26mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Ultrahigh-Speed Switching Applications

Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters.

SANYO

三洋

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Converters. • Micaless package facilitating mounting.

SANYO

三洋

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 80mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 25A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 45mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating mounting.

SANYO

三洋

Ultrahigh-Speed Switching Applications

Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating mounting.

SANYO

三洋

Ultrahigh-Speed Switching Applications

Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating mounting.

SANYO

三洋

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating mounting.

SANYO

三洋

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 26mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 26mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications · Low ON-state resistance. · Ultrahigh-speed switching. · Converters.

SANYO

三洋

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters.

SANYO

三洋

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 80A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 16mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.026Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK14产品属性

  • 类型

    描述

  • 型号

    2SK14

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    TRANS MOSFET N-CH 300V 7A 3PIN TO-220AB - Rail/Tube

更新时间:2025-12-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC/RENESAS
24+
NA/
18250
原装现货,当天可交货,原型号开票
RENESAS(瑞萨)/IDT
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
NEC
24+
SOT89
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
NEC/RENESAS
22+
SOT89
100000
代理渠道/只做原装/可含税
NEC
24+
SOT89
96000
公司大量原装现货,欢迎来电
NEC
22+
SOT89
20000
公司只有原装 品质保证
NEC
21+
SOT89
1062
只做原装正品,不止网上数量,欢迎电话微信查询!
NEC
25+
SOT89
860000
明嘉莱只做原装正品现货
NEC
25+
SOT-89
2000
百分百原装正品 真实公司现货库存 本公司只做原装 可
2SK1483-T2
25+
30500
30500

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