位置：首页 > IC中文资料第6040页 > 2SK130
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 |  |   | |
SiliconNChannelMOSFET SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice -Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswit | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
SiliconNChannelMOSFET SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice -Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswit | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice -Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice -Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice -Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •4Vgatedrivedevice -Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •4Vgatedrivedevice -Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •4Vgatedrivedevice -Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice –Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice -Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice -Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice -Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice -Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice -Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice -Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •4Vgatedrivedevice -Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET •Lowon-resistance •Highspeedswitching •4Vgatedrivedevice -Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET •Lowon-resistance •Highspeedswitching •4Vgatedrivedevice -Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：305.93 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-Channel100-V(D-S)MOSFET 文件：773.47 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
SiliconNChannelMOSFET 文件：102.02 Kbytes Page：9 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：305.66 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel100-V(D-S)MOSFET 文件：773.39 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel100-V(D-S)MOSFET 文件：774.26 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：305.34 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：303.16 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：303.64 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：296.31 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel100-V(D-S)MOSFET 文件：2.19249 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：296.99 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：296.65 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
2SK130产品属性
- 类型
描述
- 型号
2SK130
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon N-Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
日立 |
2021+ |
TO-220 |
6430 |
原装现货/欢迎来电咨询 |
|||
RENESAS/瑞萨 |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
POWER |
2020+ |
TO220 |
12500 |
原装正品现货 |
|||
日立 |
22+ |
TO-220 |
6980 |
原装现货,可开13%税票 |
|||
POWER |
2022+ |
TO220 |
57550 |
||||
Renesas |
17+ |
TO-220 |
6200 |
||||
HIT |
2020+ |
TO-220AB |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
ruichips |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
HITACHI/日立 |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
HIT |
23+ |
原厂原装 |
5000 |
全新原装 |
2SK130芯片相关品牌
2SK130规格书下载地址
2SK130参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
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- 3579
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- 2SK1323
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- 2SK1319
- 2SK1318
- 2SK1317
- 2SK1316
- 2SK1315
- 2SK1314
- 2SK1313
- 2SK1310A
- 2SK1310
- 2SK1308A
- 2SK1308
- 2SK1307-E
- 2SK1307
- 2SK1306-E
- 2SK1306
- 2SK1305-E
- 2SK1305
- 2SK1304-E
- 2SK1304
- 2SK1303(E)
- 2SK1303
- 2SK1302-E
- 2SK1302
- 2SK1301-E
- 2SK1301(E)
- 2SK1301
- 2SK1300-E
- 2SK1300
- 2SK1299S
- 2SK1299L
- 2SK12996
- 2SK1299(L)|2SK1299(S)
- 2SK1299
- 2SK1298-E
- 2SK1298
- 2SK1297
- 2SK1296
- 2SK1295-AZ
- 2SK1295
- 2SK1294
- 2SK1293-AZ
- 2SK1293
- 2SK1292-AZ
- 2SK1292
- 2SK1290(AZ)
- 2SK1290
- 2SK128D
- 2SK1289
- 2SK1288
- 2SK1286
- 2SK1285
- 2SK1284
- 2SK1283
- 2SK1280
- 2SK128
- 2SK1279
- 2SK1278
- 2SK1277
- 2SK1274
- 2SK1273
- 2SK1272
2SK130数据表相关新闻
2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E原装正品现货供应
2024-3-232SD669AL-TO92NLB-C-TG_UTC代理商
2SD669AL-TO92NLB-C-TG_UTC代理商
2023-2-172SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
2023-2-82SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-122SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-302SK1985-01MR
2SK1985-01MR，全新原装当天发货或门市自取0755-82732291.
2019-10-30
DdatasheetPDF页码索引
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