位置：首页 > IC中文资料第664页 > 2SK1306-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK1306-E | Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching | RENESAS 瑞萨 |   | |
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
isc N-Channel MOSFET Transistor 文件：296.99 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK1306-E产品属性
- 类型
描述
- 型号
2SK1306-E
- 制造商
Renesas Electronics
- 功能描述
Trans MOSFET N-CH 100V 15A 3-Pin(3+Tab) TO-220FM Box Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
0413+ |
TO220F |
2337 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HITACHI |
24+/25+ |
2980 |
原装正品现货库存价优 |
||||
RENESAS/瑞萨 |
2223+ |
T0220 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
TOSHIBA |
18+ |
TO-62 |
85600 |
保证进口原装可开17%增值税发票 |
|||
RENESAS/瑞萨 |
22+ |
T0220 |
8000 |
原装正品支持实单 |
|||
日立 |
24+ |
TO-220F |
6980 |
原装现货,可开13%税票 |
|||
TOSHIBA |
23+ |
TO-62 |
1520 |
专营高频管模块,全新原装! |
|||
HIT |
24+ |
TO220 |
10 |
||||
UTG |
23+ |
SOT-252 |
9004999 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
RENESAS |
15+ |
TO-220F-3 |
100 |
全新 发货1-2天 |
2SK1306-E芯片相关品牌
2SK1306-E规格书下载地址
2SK1306-E参数引脚图相关
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2SK1306-E数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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