2SK12价格

参考价格:¥0.3250

型号:2SK1228 品牌:Panasonic 备注:这里有2SK12多少钱,2025年最近7天走势,今日出价,今日竞价,2SK12批发/采购报价,2SK12行情走势销售排行榜,2SK12报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SK12

CHOPPER SWITCHING APPLICATIONS

Application General Purpose Low Noise Low Noise High IYfsl Low Noise Controlled Resistor Swiching, Chopper Analog Switch, Chopper Application Switching choppen

TOSHIBA

东芝

SILICON N-CHANNEL MOS FET

SILICON N-CHANNEL MOS FET

ETCList of Unclassifed Manufacturers

未分类制造商

Fast Switching Speed

DESCRIPTION • Drain Current –ID= 6A@ TC=25℃ • Drain Source Voltage- : VDSS= 900V(Min) • Fast Switching Speed APPLICATIONS • Designed for high voltage, high speed power switching

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Silicon N-Channel Junction FET

Silicon N-Channel Junction FET

SonySony Corporation

索尼

N-CHANNEL SILICON POWER MOS-FET

N-CHANNEL SILICON POWER MOS-FET

Fuji

富士通

N CHANNEL SILICON POWER MOSFET

N-CHANNEL SILICON POWER MOS-FET

Fuji

富士通

Silicon N-channel Power F-MOS FET

Silicon N-channel Power F-MOS FET

Panasonic

松下

Silicon N-Channel MOS FET

Application VHF amplifier

HitachiHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Application VHF amplifier

RENESAS

瑞萨

Silicon N-Channel MOS FET

Application VHF amplifier

RENESAS

瑞萨

Silicon N-Channel MOS FET

Application VHF amplifier

RENESAS

瑞萨

N-CHANNEL SILICON POWER MOS-FET

N-CHANNEL SILICON POWER MOS-FET

Fuji

富士通

N-Channel Silicon Power MOS-FET

N-CHANNEL SILICON POWER MOS-FET

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET For switching ■ Features ● High-speed switching ● Wide frequency band ● Incorporating a built-in gate protection-diode ● Allowing 2.5V drive

Panasonic

松下

Silicon N-Channel Junction FET

For impedance conversion in low frequency For electret capacitor microphone ■Features ●High mutual conductance gm ●Low noise voltage of NV

Panasonic

松下

For Impedance Conversion In Low Frequency

For impedance conversion in low frequency For electret capacitor microphone ■Features ●High mutual conductance gm ●Low noise voltage of NV

Panasonic

松下

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 120V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.3Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.3Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.45Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

VX Series Power MOSFET

VX Series Power MOSFET

ETCList of Unclassifed Manufacturers

未分类制造商

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.03Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

RENESAS

瑞萨

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

RENESAS

瑞萨

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

RENESAS

瑞萨

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

RENESAS

瑞萨

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

HitachiHitachi Semiconductor

日立日立公司

Silicon N-Channel MOSFET

Features Low on-resistance High speed switching Suitable for switching regulator and DC-DC converter

KEXIN

科信电子

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

RENESAS

瑞萨

Silicon N-channel Power F-MOS FET

Panasonic

松下

SILICON N-CHANNEL POWER F-MOS FET

Silicon N-channel power F-MOS FET

Panasonic

松下

Silicon N-channel Power F-MOS FET

Silicon N-channel Power F-MOS FET ■ Features ● Low ON-resistance RDS(on) : RDS(on)1= 0.08Ω(typ) ● High-speed switching : tf=180ns(typ) ● No secondary breakdown ● Low-voltage drive ■ Applications ● DC-DC converter ● Non-contact relay ● Solenoid drive ● Motor drive

Panasonic

松下

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.36Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

SILICON N-CHANNEL MOSFET HIGH SPEEED POWER SWITCHING

SILICON N-CHANNEL MOSFET HIGH SPEEED POWER SWITCHING

HitachiHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1271 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1271 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • High voltage rating (VDSS = 1400 V) • Low on-state resistance RDS(on) = 4.0 Ω MAX. (VGS = 10 V, ID = 3 A) • Low Ciss Ciss = 18

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

The 25K1272, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a5 V power source. The MOS FET has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuits. FEATURES - Dir

RENESAS

瑞萨

Field Effect Transistor

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

Field Effect Transistor

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES - Directly driven by ICs havinga 5 V power source - Has low on-state resistance. Ros(on) = 1.00 2 MAX. @Vgs =40V, Ip = 05 A Ros(on) = 0.65 2 MAX. @Vgs = 10V, Ip = 05 A - Not necessary to_consider driving current because of its high input impedance. - Possible 0 reduce the number of

RENESAS

瑞萨

MOS Field Effect Transistor

Features • Directly driver by Ics having a 5V power source. • Has low on-satate resistance RDS(on)=1.00 MAX.@VGS=4.0V,ID=0.5A RDS(on)=0.65 MAX.@VGS=10V,ID=0.5A • Not necessary to consider driving current because of its high input impedance. • Possible to reduce the number o

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

RENESAS

瑞萨

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 7.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK12产品属性

  • 类型

    描述

  • 型号

    2SK12

  • 制造商

    Hitachi

  • 功能描述

    MOSFET Transistor, N-Channel, TO-247VAR

更新时间:2025-12-25 19:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI/日立
24+
TO 220F
158526
明嘉莱只做原装正品现货
JIT
24+
NA/
67
优势代理渠道,原装正品,可全系列订货开增值税票
HIT
22+
TO-3P
20000
公司只有原装 品质保证
25+
100
公司现货库存
25+
100
公司现货库存
SHINDENGEN/新电元
25+
TO-3P247
45000
SHINDENGEN/新电元全新现货2SK1250即刻询购立享优惠#长期有排单订
RENESAS
26+
TO-252
360000
进口原装现货
RENESAS/瑞萨
24+
TO-252
33500
全新进口原装现货,假一罚十
HITACHI
23+
TO-3P
5000
专做原装正品,假一罚百!
HITACHI
23+
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详

2SK12数据表相关新闻