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2SK12价格
参考价格:¥0.3250
型号:2SK1228 品牌:Panasonic 备注:这里有2SK12多少钱,2025年最近7天走势,今日出价,今日竞价,2SK12批发/采购报价,2SK12行情走势销售排行榜,2SK12报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK12 | CHOPPER SWITCHING APPLICATIONS Application General Purpose Low Noise Low Noise High IYfsl Low Noise Controlled Resistor Swiching, Chopper Analog Switch, Chopper Application Switching choppen | TOSHIBA 东芝 | ||
SILICON N-CHANNEL MOS FET SILICON N-CHANNEL MOS FET | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Fast Switching Speed DESCRIPTION • Drain Current –ID= 6A@ TC=25℃ • Drain Source Voltage- : VDSS= 900V(Min) • Fast Switching Speed APPLICATIONS • Designed for high voltage, high speed power switching | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
Silicon N-Channel Junction FET Silicon N-Channel Junction FET | SonySony Corporation 索尼 | |||
N-CHANNEL SILICON POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET | Fuji 富士通 | |||
N CHANNEL SILICON POWER MOSFET N-CHANNEL SILICON POWER MOS-FET | Fuji 富士通 | |||
Silicon N-channel Power F-MOS FET Silicon N-channel Power F-MOS FET | Panasonic 松下 | |||
Silicon N-Channel MOS FET Application VHF amplifier | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N-Channel MOS FET Application VHF amplifier | RENESAS 瑞萨 | |||
Silicon N-Channel MOS FET Application VHF amplifier | RENESAS 瑞萨 | |||
Silicon N-Channel MOS FET Application VHF amplifier | RENESAS 瑞萨 | |||
N-CHANNEL SILICON POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET | Fuji 富士通 | |||
N-Channel Silicon Power MOS-FET N-CHANNEL SILICON POWER MOS-FET | Fuji 富士通 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
Silicon N-Channel MOS FET Silicon N-Channel MOS FET For switching ■ Features ● High-speed switching ● Wide frequency band ● Incorporating a built-in gate protection-diode ● Allowing 2.5V drive | Panasonic 松下 | |||
Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone ■Features ●High mutual conductance gm ●Low noise voltage of NV | Panasonic 松下 | |||
For Impedance Conversion In Low Frequency For impedance conversion in low frequency For electret capacitor microphone ■Features ●High mutual conductance gm ●Low noise voltage of NV | Panasonic 松下 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 120V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.3Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.3Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.45Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
VX Series Power MOSFET VX Series Power MOSFET | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.03Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | |||
Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | |||
Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N-Channel MOSFET Features Low on-resistance High speed switching Suitable for switching regulator and DC-DC converter | KEXIN 科信电子 | |||
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | |||
Silicon N-channel Power F-MOS FET
| Panasonic 松下 | |||
SILICON N-CHANNEL POWER F-MOS FET Silicon N-channel power F-MOS FET | Panasonic 松下 | |||
Silicon N-channel Power F-MOS FET Silicon N-channel Power F-MOS FET ■ Features ● Low ON-resistance RDS(on) : RDS(on)1= 0.08Ω(typ) ● High-speed switching : tf=180ns(typ) ● No secondary breakdown ● Low-voltage drive ■ Applications ● DC-DC converter ● Non-contact relay ● Solenoid drive ● Motor drive | Panasonic 松下 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.36Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
SILICON N-CHANNEL MOSFET HIGH SPEEED POWER SWITCHING SILICON N-CHANNEL MOSFET HIGH SPEEED POWER SWITCHING | HitachiHitachi Semiconductor 日立日立公司 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
N CHANNEL MOS FIELD EFFECT POWER TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1271 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. | NEC 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1271 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • High voltage rating (VDSS = 1400 V) • Low on-state resistance RDS(on) = 4.0 Ω MAX. (VGS = 10 V, ID = 3 A) • Low Ciss Ciss = 18 | RENESAS 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR The 25K1272, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a5 V power source. The MOS FET has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuits. FEATURES - Dir | RENESAS 瑞萨 | |||
Field Effect Transistor SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |||
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |||
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |||
Field Effect Transistor SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR FEATURES - Directly driven by ICs havinga 5 V power source - Has low on-state resistance. Ros(on) = 1.00 2 MAX. @Vgs =40V, Ip = 05 A Ros(on) = 0.65 2 MAX. @Vgs = 10V, Ip = 05 A - Not necessary to_consider driving current because of its high input impedance. - Possible 0 reduce the number of | RENESAS 瑞萨 | |||
MOS Field Effect Transistor Features • Directly driver by Ics having a 5V power source. • Has low on-satate resistance RDS(on)=1.00 MAX.@VGS=4.0V,ID=0.5A RDS(on)=0.65 MAX.@VGS=10V,ID=0.5A • Not necessary to consider driving current because of its high input impedance. • Possible to reduce the number o | KEXIN 科信电子 | |||
MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING | RENESAS 瑞萨 | |||
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 7.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |
2SK12产品属性
- 类型
描述
- 型号
2SK12
- 制造商
Hitachi
- 功能描述
MOSFET Transistor, N-Channel, TO-247VAR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
24+ |
TO 220F |
158526 |
明嘉莱只做原装正品现货 |
|||
JIT |
24+ |
NA/ |
67 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HIT |
22+ |
TO-3P |
20000 |
公司只有原装 品质保证 |
|||
25+ |
100 |
公司现货库存 |
|||||
25+ |
100 |
公司现货库存 |
|||||
SHINDENGEN/新电元 |
25+ |
TO-3P247 |
45000 |
SHINDENGEN/新电元全新现货2SK1250即刻询购立享优惠#长期有排单订 |
|||
RENESAS |
26+ |
TO-252 |
360000 |
进口原装现货 |
|||
RENESAS/瑞萨 |
24+ |
TO-252 |
33500 |
全新进口原装现货,假一罚十 |
|||
HITACHI |
23+ |
TO-3P |
5000 |
专做原装正品,假一罚百! |
|||
HITACHI |
23+ |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
2SK12芯片相关品牌
2SK12规格书下载地址
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2SK12数据表相关新闻
2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E 原装正品 现货供应
2024-3-232SD669AL-TO92NLB-C-TG_UTC代理商
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2SD882SL-TO92B-P-TG_UTC代理商
2023-2-82SK1485-T1
2SK1485-T1,当天发货0755-82732291全新原装现货或门市自取.
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2SK1985,全新原装当天发货或门市自取0755-82732291.
2019-10-302SK1985-01MR
2SK1985-01MR,全新原装当天发货或门市自取0755-82732291.
2019-10-30
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