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2SK12价格
参考价格：￥0.3250
型号：2SK1228 品牌：Panasonic 备注：这里有2SK12多少钱，2024年最近7天走势，今日出价，今日竞价，2SK12批发/采购报价，2SK12行情走势销售排行榜，2SK12报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK12 | CHOPPERSWITCHINGAPPLICATIONS Application GeneralPurpose LowNoise LowNoise HighIYfslLowNoise ControlledResistor Swiching,Chopper AnalogSwitch,Chopper Application Switchingchoppen | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  |   |
SILICONN-CHANNELMOSFET SILICONN-CHANNELMOSFET | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
FastSwitchingSpeed DESCRIPTION •DrainCurrent–ID=6A@TC=25℃ •DrainSourceVoltage-:VDSS=900V(Min) •FastSwitchingSpeed APPLICATIONS •Designedforhighvoltage,highspeedpowerswitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
SiliconN-ChannelJunctionFET SiliconN-ChannelJunctionFET | SonySONY 索尼索 尼 |  | | |
N-CHANNELSILICONPOWERMOS-FET N-CHANNELSILICONPOWERMOS-FET | FujiFUJI CORPORATION 株式会社ＦＵＪＩ |  | | |
NCHANNELSILICONPOWERMOSFET N-CHANNELSILICONPOWERMOS-FET | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
SiliconN-channelPowerF-MOSFET SiliconN-channelPowerF-MOSFET | PanasonicPanasonic Corporation 松下松下电器 |  | | |
SiliconN-ChannelMOSFET Application VHFamplifier | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
SiliconN-ChannelMOSFET Application VHFamplifier | HitachiHitachi, Ltd. 日立公司 |  | | |
SiliconN-ChannelMOSFET Application VHFamplifier | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET Application VHFamplifier | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-CHANNELSILICONPOWERMOS-FET N-CHANNELSILICONPOWERMOS-FET | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
N-ChannelSiliconPowerMOS-FET N-CHANNELSILICONPOWERMOS-FET | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
SiliconN-ChannelMOSFET SiliconN-ChannelMOSFET Forswitching ■Features ●High-speedswitching ●Widefrequencyband ●Incorporatingabuilt-ingateprotection-diode ●Allowing2.5Vdrive | PanasonicPanasonic Corporation 松下松下电器 | | | |
SiliconN-ChannelJunctionFET Forimpedanceconversioninlowfrequency Forelectretcapacitormicrophone ■Features ●Highmutualconductancegm ●LownoisevoltageofNV | PanasonicPanasonic Corporation 松下松下电器 | | | |
ForImpedanceConversionInLowFrequency Forimpedanceconversioninlowfrequency Forelectretcapacitormicrophone ■Features ●Highmutualconductancegm ●LownoisevoltageofNV | PanasonicPanasonic Corporation 松下松下电器 | | | |
VXSeriesPowerMOSFET VXSeriesPowerMOSFET | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
SiliconN-ChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •4Vgatedrivedevice Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •4Vgatedrivedevice Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •4Vgatedrivedevice Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •4Vgatedrivedevice Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •4Vgatedrivedevice Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET Features Lowon-resistance Highspeedswitching SuitableforswitchingregulatorandDC-DCconverter | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | | |
SiliconNChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •4Vgatedrivedevice Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •4Vgatedrivedevice Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •4Vgatedrivedevice Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-channelPowerF-MOSFET
| PanasonicPanasonic Corporation 松下松下电器 | | | |
SILICONN-CHANNELPOWERF-MOSFET SiliconN-channelpowerF-MOSFET | PanasonicPanasonic Corporation 松下松下电器 | | | |
SiliconN-channelPowerF-MOSFET SiliconN-channelPowerF-MOSFET ■Features ●LowON-resistanceRDS(on):RDS(on)1=0.08Ω(typ) ●High-speedswitching:tf=180ns(typ) ●Nosecondarybreakdown ●Low-voltagedrive ■Applications ●DC-DCconverter ●Non-contactrelay ●Solenoiddrive ●Motordrive | PanasonicPanasonic Corporation 松下松下电器 | | | |
SILICONN-CHANNELMOSFETHIGHSPEEEDPOWERSWITCHING SILICONN-CHANNELMOSFETHIGHSPEEEDPOWERSWITCHING | HitachiHitachi, Ltd. 日立公司 | | | |
NCHANNELMOSFIELDEFFECTPOWERTRANSISTOR SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK1271isN-ChannelMOSFieldEffectTransistordesignedforhighvoltageswitchingapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK1271isN-ChannelMOSFieldEffectTransistordesignedforhighvoltageswitchingapplications. FEATURES •Highvoltagerating(VDSS=1400V) •Lowon-stateresistance RDS(on)=4.0ΩMAX.(VGS=10V,ID=3A) •LowCissCiss=18 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR The25K1272,N-channelverticaltypeMOSFET,isaswitching devicewhichcanbedrivendirectlybytheoutputofICshavinga5V powersource. TheMOSFEThasexcellentswitchingcharacteristicsandissuitable foruseasahigh-speedswitchingdeviceindigitalcircuits. FEATURES -Dir | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
FieldEffectTransistor SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-CHANNELMOSFETFORHIGHSPEEDSWITCHING SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-CHANNELMOSFETFORHIGHSPEEDSWITCHING SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFieldEffectTransistor Features •DirectlydriverbyIcshavinga5Vpowersource. •Haslowon-satateresistance RDS(on)=1.00MAX.@VGS=4.0V,ID=0.5A RDS(on)=0.65MAX.@VGS=10V,ID=0.5A •Notnecessarytoconsiderdrivingcurrentbecauseofitshighinputimpedance. •Possibletoreducethenumbero | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
FieldEffectTransistor SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR FEATURES -DirectlydrivenbyICshavinga5Vpowersource -Haslowon-stateresistance. Ros(on)=1.002MAX.@Vgs=40V,Ip=05A Ros(on)=0.652MAX.@Vgs=10V,Ip=05A -Notnecessaryto_considerdrivingcurrentbecauseofitshighinputimpedance. -Possible0reducethenumberof | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR N-CHANNELMOSFET FORHIGHSPEEDSWITCHING | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-CHANNELMOSFETFORHIGHSPEEDSWITCHING SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-channelMOS-FET >Features -IncludeFastRecoveryDiode -HighVoltage -LowDrivingPower >Applications -MotorControl -Inverters -Choppers | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
N-ChannelMOS-FET(250V,0.12Ohm,30A,150W) >Features -IncludeFastRecoveryDiode -HighVoltage -LowDrivingPower >Applications -MotorControl -Inverters -Choppers | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
FastSwitchingSpeed DESCRIPTION •DrainCurrent–ID=30A@TC=25℃ •DrainSourceVoltage- :VDSS=250V(Min) •FastSwitchingSpeed APPLICATIONS •highspeedpowerswitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
FastSwitchingSpeed DESCRIPTION •DrainCurrent–ID=10A@TC=25℃ •DrainSourceVoltage-:VDSS=500V(Min) •FastSwitchingSpeed APPLICATIONS •Designedforhighvoltage,highspeedpowerswitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-channelMOS-FET >Features -IncludeFastRecoveryDiode -HighVoltage -LowDrivingPower >Applications -MotorControl -Inverters -Choppers | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
N-channelMOS-FET >Features -IncludeFastRecoveryDiode -HighVoltage -LowDrivingPower >Applications -MotorControl -Inverters -Choppers | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
FastSwitchingSpeed DESCRIPTION •DrainCurrent–ID=15A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •FastSwitchingSpeed APPLICATIONS •Designedforhighvoltage,highspeedpowerswitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SINCHANNELJUNCTION SiliconN-ChannelJunctionFET(2SK128,2SK155,2SK136) | PanasonicPanasonic Corporation 松下松下电器 | | | |
N-ChannelMOS-FET(500V,0.5Ohm,18A,150W) -IncludeFastRecoveryDiode -HighVoltage -LowDrivingPower N-channelMOS-FET 500V0,5Ohm18A150W | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
MOSFIELDEFFECTPOWERTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK1283isN-channelMOSFieldEffectTransistordesignedor solenoid,motorandlampdriver. FEATURES •Lowon-stateresistance RDS(on)=0.18ΩMAX.(VGS=10V,ID=2A) RDS(on)=0.24ΩMAX.(VGS=4V,ID=2A) •LowCissCiss= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFieldEffectPowerTransistor MOSFieldEffectPowerTransistor Features Lowon-stateresistance RDS(on) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK1284isN-channelMOSFieldEffectTransistordesignedfor solenoid,motorandlampdriver. FEATURES •LowOn-stateResistance RDS(on)≤0.32Ω(VGS=10V,ID=2A) RDS(on)≤0.40Ω(VGS=4.0V,ID=2A) •LowCiss:Ciss=500p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-ChannelMOSFET N-ChannelMOSFET Features Lowon-stateresistance RDS(on)0.32.@VGS=10V,ID=2A RDS(on)0.40@VGS=4V,ID=2A LowCissCiss=500pFTYP. Built-inG-SGateProtectionDiode | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-CHANNELMOSFIELDEFFECTPOWERTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK1285isN-channelMOSFieldEffectTransistordesignedfor solenoid,motorandlampdriver. FEATURES •Lowon-stateresistance RDS(on)=0.32ΩMAX.(VGS=10V,ID=2A) RDS(on)=0.40ΩMAX.(VGS=4V,ID=2A) •LowCissCiss | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
2SK12产品属性
- 类型
描述
- 型号
2SK12
- 制造商
Hitachi
- 功能描述
MOSFET Transistor, N-Channel, TO-247VAR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
NEC |
2020+ |
TO252-3 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
量大可定Panasonic |
20+ |
SOT23 |
49000 |
原装优势主营型号-可开原型号增税票 |
|||
NEC |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
TOSHIBA |
11+ |
17800 |
原装正品长期供货，如假包赔包换 徐小姐13714450367 |
||||
HITACHI/日立 |
24+ |
TO 220F |
158526 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
05+ |
SOT252 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
2016+ |
TO-263 |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
PANASONIC/松下 |
2048+ |
TO-92 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
RENESAS(瑞萨)/IDT |
23+ |
6000 |
诚信服务，绝对原装原盘 |
2SK12芯片相关品牌
2SK12规格书下载地址
2SK12参数引脚图相关
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- 3q1
- 3g汽车
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- 2SK1334BYTL-E
- 2SK1334BY
- 2SK1317-E
- 2SK1311
- 2SK1299
- 2SK1284-Z-E1
- 2SK1273
- 2SK1250
- 2SK1249
- 2SK1248
- 2SK123
- 2SK1228
- 2SK1224
- 2SK1222
- 2SK1221
- 2SK1217
- 2SK1215
- 2SK1214
- 2SK1213
- 2SK1212
- 2SK1211
- 2SK121
- 2SK1204
- 2SK1203
- 2SK1202
- 2SK1201
- 2SK1200
- 2SK1199
- 2SK1197
- 2SK1195
- 2SK1194
- 2SK1192
- 2SK1191
- 2SK1190
- 2SK1189
- 2SK1188
- 2SK1187
- 2SK1186
- 2SK1185
- 2SK1184
- 2SK1183
- 2SK1181
- 2SK1180
- 2SK118
- 2SK1179
- 2SK1178
- 2SK1177
- 2SK1151S
- 2SK1133
- 2SK1112
- 2SK1103-P
- 2SK11030QL
- 2SK1078
- 2SK1067-4
- 2SK1059-Z-E1
- 2SK1058-E
- 2SK0663GRL
- 2SK0663GQL
- 2SK01980RL
- 2SJ668(TE16L1,NQ)
- 2SJ652-1E
- 2SJ648
- 2SJ647
- 2SJ637-TL-E
- 2SJ634
- 2SJ633-TL
2SK12数据表相关新闻
2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E原装正品现货供应
2024-3-232SD669AL-TO92NLB-C-TG_UTC代理商
2SD669AL-TO92NLB-C-TG_UTC代理商
2023-2-172SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
2023-2-82SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-122SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-302SK1985-01MR
2SK1985-01MR，全新原装当天发货或门市自取0755-82732291.
2019-10-30
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