位置：首页 > IC中文资料第11963页 > 2SK1152S
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK1152S | Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SK1152S | Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | | |
2SK1152S | Silicon N-Channel MOSFET Features ● Low on-resistance ● High speed switching ● Low drive current ● No secondary breakdown ● Suitable for switching regulator and DC-DC converter | KEXIN 科信电子 | | |
2SK1152S | isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 1.5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =6.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
2SK1152S | isc N-Channel MOSFET Transistor 文件：309.36 Kbytes Page：2 Pages | ISC 无锡固电 | | |
Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | HitachiHitachi Semiconductor 日立日立公司 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08594 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.086 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | HitachiHitachi Semiconductor 日立日立公司 | | ||
isc N-Channel MOSFET Transistor 文件：317.55 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK1152S产品属性
- 类型
描述
- 型号
2SK1152S
- 制造商
KEXIN
- 制造商全称
Guangdong Kexin Industrial Co.,Ltd
- 功能描述
Silicon N-Channel MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
24+ |
SOT-252 |
5000 |
全现原装公司现货 |
|||
RENESA |
24+ |
SOT-252 |
90000 |
郑重承诺只做原装进口现货 |
|||
RENESAS/瑞萨 |
24+ |
TO-252 |
9600 |
原装现货,优势供应,支持实单! |
|||
HITACHI/日立 |
2024 |
TO-252 |
500153 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
HITACHI |
23+ |
SOT-252 |
30000 |
代理全新原装现货,价格优势 |
|||
RENESAS/瑞萨 |
06PB |
TO-252 |
2876 |
只做原装正品 |
|||
RENESAS/瑞萨 |
2022+ |
TO-252 |
50000 |
原厂代理 终端免费提供样品 |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
2876 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS/瑞萨 |
2223+ |
TO-252 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
JINGDAO/晶导微 |
23+ |
SMA(DO-214AC) |
69820 |
终端可以免费供样,支持BOM配单! |
2SK1152S规格书下载地址
2SK1152S参数引脚图相关
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- 2SK1152-L(E)
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- 2SK1151L
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- 2SK1151(L)(S)|2SK1152(L)(S)
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2SK1152S数据表相关新闻
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2SJ652-1E 原装正品 现货供应
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2023-2-172SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
2023-2-82SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-122SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-302SK1985-01MR
2SK1985-01MR，全新原装当天发货或门市自取0755-82732291.
2019-10-30
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