isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.08Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switchi

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 13A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.12Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL SILICON POWER MOSFET???

Features ● High current ● Low on-resistance ● No secondary breakdown ● Low driving power ● High forward Transconductance Applications ● Motor controllers ● General purpose power amplifier ● DC-DC converters

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.28Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 6A@ TC=25℃ · Drain Source Voltage -VDSS= 150V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel MOS-FET

F-III Series > Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

N-CHANNEL SILICON POWER MOS-FET

[Fuji] Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

Drain Current ?밒D=10A@ TC=25C

DESCRIPTION • Drain Current –ID=10A@ TC=25℃ • Drain Source Voltage- : VDSS=500V(Min) APPLICATIONS • Designed for high voltage, high speed power switching

Isc N-Channel MOSFETransistor

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N-Channel 60 V (D-S) MOSFET

文件：2.13822 Mbytes Page：8 Pages

isc N-Channel MOSFET Transistor

文件：296.11 Kbytes Page：2 Pages

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET

Power MOSFETs

isc N-Channel MOSFET Transistor

文件：296.36 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：287.56 Kbytes Page：2 Pages

N-Channel 60 V (D-S) MOSFET

文件：2.13907 Mbytes Page：8 Pages

Isc N-Channel MOSFETransistor

文件：270.81 Kbytes Page：2 Pages

Isc N-Channel MOSFETransistor

文件：270.84 Kbytes Page：2 Pages

Isc N-Channel MOSFETransistor

文件：270.93 Kbytes Page：2 Pages