位置：首页 > IC中文资料第10149页 > 2SJ687
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ687 | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A) RDS(on)3 = 20 mΩ MAX. | NEC 瑞萨 |   | |
2SJ687 | MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 | RENESAS 瑞萨 | | |
2SJ687 | MOS FIELD EFFECT TRANSISTOR | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A) RDS(on)3 = 20 mΩ MAX. | NEC 瑞萨 | | ||
P-Channel 30 V (D-S) MOSFET FEATURES • Compliant to RoHS Directive 2002/95/EC | VBSEMI 微碧半导体 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A) RDS(on)3 = 20 mΩ MAX. | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET 文件：277.43 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
Pch Single Power Mosfet -20V -20A 7.0Mohm Mp-3Zk/To-252 | RENESAS 瑞萨 | |
2SJ687产品属性
- 类型
描述
- 型号
2SJ687
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
5250 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS |
1533+ |
TO-252 |
2500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
23+ |
TO252 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
RENESAS/瑞萨 |
25+ |
TO-252 |
20300 |
RENESAS/瑞萨原装特价2SJ687-ZK即刻询购立享优惠#长期有货 |
|||
RENESAS |
25+23+ |
TO252 |
11296 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS/瑞萨 |
24+ |
TO-252 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
NEC |
25+ |
TO-252 |
2000 |
全新原装正品支持含税 |
|||
RENESAS |
24+ |
TO-252 |
16900 |
原装正品现货支持实单 |
2SJ687规格书下载地址
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DdatasheetPDF页码索引
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