Pch Single Power Mosfet -20V -20A 7.0Mohm Mp-3Zk/To-252

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A) RDS(on)3 = 20 mΩ MAX.

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A) RDS(on)3 = 20 mΩ MAX.

P-Channel 30 V (D-S) MOSFET

FEATURES • Compliant to RoHS Directive 2002/95/EC

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A) RDS(on)3 = 20 mΩ MAX.