位置：首页 > IC中文资料第6907页 > 2SJ606
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ606 | MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss=4800pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
2SJ606 | MOSFieldEffectTransistor Features ●Lowon-resistance RDS(on)1=15mMAX.(VGS=-10V,ID=-42A) RDS(on)2=23mMAX.(VGS=-4.0V,ID=-42A) ●LowCiss:Ciss=4800pFTYP. ●Built-ingateprotectiondiode | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | |
2SJ606 | MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss=4800pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss=4800pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss=4800pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
P-ChannelMOSFET ■Features ●VDS(V)=-60V ●ID=-83A ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR 文件：214.49 Kbytes Page：10 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
2SJ606产品属性
- 类型
描述
- 型号
2SJ606
- 制造商
KEXIN
- 制造商全称
Guangdong Kexin Industrial Co.,Ltd
- 功能描述
MOS Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC/Renesas Electronics Americ |
21+ |
TO-220 |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS/瑞萨 |
18+ |
TO-220 |
182 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
21+ |
TO-263 |
12588 |
原装正品,自己库存 假一罚十 |
|||
NEC |
2023+ |
TO-220 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
NEC |
23+ |
TO-220 |
35890 |
||||
NEC |
TO-263 |
608900 |
原包原标签100%进口原装常备现货! |
||||
RENESAS |
2020+ |
TO-220 |
33980 |
公司代理品牌,原装现货超低价清仓! |
|||
NEC |
2022 |
TO-220-3 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
NEC |
05+ |
TO-220AB |
20000 |
||||
NEC |
23+ |
TO-220 |
2550 |
原厂原装正品 |
2SJ606芯片相关品牌
2SJ606规格书下载地址
2SJ606参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SJ633
- 2SJ632
- 2SJ630
- 2SJ629
- 2SJ628
- 2SJ626
- 2SJ625
- 2SJ624
- 2SJ621
- 2SJ620
- 2SJ619
- 2SJ618
- 2SJ616
- 2SJ615
- 2SJ613
- 2SJ612
- 2SJ610_09
- 2SJ610_06
- 2SJ610(TE16L1,NQ)
- 2SJ610(Q)
- 2SJ610
- 2SJ609
- 2SJ608
- 2SJ607-ZJ-E1
- 2SJ607-ZJ
- 2SJ607-Z-AZ
- 2SJ607-Z
- 2SJ607-S
- 2SJ607-AZ
- 2SJ607
- 2SJ606-ZJ
- 2SJ606-Z(AZ)
- 2SJ606-Z
- 2SJ606-S
- 2SJ606-AZ
- 2SJ605-ZJ-E1-AZ
- 2SJ605-ZJ
- 2SJ605-Z-AZ
- 2SJ605-Z
- 2SJ605-S
- 2SJ605-AZ
- 2SJ605
- 2SJ604-ZJ-E1-AZ
- 2SJ604-ZJ
- 2SJ604-Z-AZ
- 2SJ604-Z
- 2SJ604-S
- 2SJ604-AZ
- 2SJ604.
- 2SJ604
- 2SJ603-ZJ
- 2SJ603-Z
- 2SJ603-S
- 2SJ603
- 2SJ602-ZJ
- 2SJ602-Z
- 2SJ602
- 2SJ601
- 2SJ600
- 2SJ599
- 2SJ598
- 2SJ597
- 2SJ596
- 2SJ595
- 2SJ594
- 2SJ591
- 2SJ590
- 2SJ589
- 2SJ588
- 2SJ587
- 2SJ586
- 2SJ583
2SJ606数据表相关新闻
2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E原装正品现货供应
2024-3-232SD669AL-TO92NLB-C-TG_UTC代理商
2SD669AL-TO92NLB-C-TG_UTC代理商
2023-2-172SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
2023-2-82SD669AL-TO126T-D-TG_UTC代理商
2SD669AL-TO126T-D-TG_UTC代理商
2023-2-22SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-122SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-30
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
