DESCRIPTION

The 2SJ606 is P-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

• Super low on-state resistance:

RDS(on)1= 15 mΩMAX. (VGS= −10 V, ID= −42 A)

RDS(on)2= 23 mΩMAX. (VGS= −4.0 V, ID= −42 A)

• Low input capacitance:

Ciss= 4800 pF TYP. (VDS= −10 V, VGS= 0 V)

• Built-in gate protection diode