MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ606 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 15 mΩMAX. (VGS= −10 V, ID= −42 A) RDS(on)2= 23 mΩMAX. (VGS= −4.0 V, ID= −42 A) • Low input capacitance: Ciss= 4800 pF

P-Channel MOSFET

■ Features ● VDS (V) =-60V ● ID =-83A ● RDS(ON)

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ606 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 15 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.0 V, ID = −42 A)

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ606 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 15 mΩMAX. (VGS= −10 V, ID= −42 A) RDS(on)2= 23 mΩMAX. (VGS= −4.0 V, ID= −42 A) • Low input capacitance: Ciss= 4800 pF

MOS Field Effect Transistor

Features ● Low on-resistance RDS(on)1=15 m MAX. (VGS=-10 V, ID= -42A) RDS(on)2= 23m MAX. (VGS=-4.0V,ID=-42 A) ● Low Ciss:Ciss = 4800 pF TYP. ● Built-in gate protection diode

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ606 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 15 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.0 V, ID = −42 A)

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ606 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 15 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.0 V, ID = −42 A)

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ606 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 15 mΩMAX. (VGS= −10 V, ID= −42 A) RDS(on)2= 23 mΩMAX. (VGS= −4.0 V, ID= −42 A) • Low input capacitance: Ciss= 4800 pF