SWITCHING

P-CHANNEL POWER MOS FET

DESCRIPTION

The 2SJ601 is P-channel MOS Field Effect Transistor designed

for solenoid, motor and lamp driver.

FEATURES

Low on-state resistance:

RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A)

RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A)

Low input capacitance:

Ciss = 3300 pF TYP. (VDS = –10 V, VGS = 0 V)

Built-in gate protection diode

TO-251/TO-252 package