型号 功能描述 生产厂家 企业 LOGO 操作
2SJ601-Z

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A) • Low input capacitance:

NEC

瑞萨

2SJ601-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A) Low input

RENESAS

瑞萨

2SJ601-Z

Isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -36A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 31mΩ(Max)@VGS= -10V DESCRIPTION ·Solenoid, motor and lamp driver

ISC

无锡固电

2SJ601-Z

Pch Single Power Mosfet -60V -36A 31Mohm Mp-3Z/To-252

RENESAS

瑞萨

P-Channel 60-V (D-S) MOSFET

FEATURES RDS(ON) 14mQ@VGs=-10V (Typ) RDs(ON) 16mQ@VGs=-4.5V(Typ) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability

TECHPUBLIC

台舟电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A) Low input

RENESAS

瑞萨

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A) • Low input capacitance:

NEC

瑞萨

MOS Field Effect Transistor

MOS Field Effect Transistor Features Low on-resistance RDS(on)1 = 31 m MAX. (VGS =-10 V, ID = -18 A) RDS(on)2 = 46m MAX. (VGS = -4.0 V, ID =-18 A) Low Ciss: Ciss = 3300 pF TYP. Built-in gate protection diode

KEXIN

科信电子

P-Channel MOSFET uses advanced trench technology

文件:1.22222 Mbytes Page:4 Pages

DOINGTER

杜因特

P-Channel 60 V (D-S) MOSFET

文件:971.71 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Pch Single Power Mosfet -60V -36A 31Mohm Mp-3Zk/To-252

RENESAS

瑞萨

2SJ601-Z产品属性

  • 类型

    描述

  • 型号

    2SJ601-Z

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

更新时间:2025-11-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Renesas(瑞萨)
24+
标准封装
9548
支持大陆交货,美金交易。原装现货库存。
NEC
24+
NA/
3560
原装现货,当天可交货,原型号开票
NEC
22+
SOT-252
100000
代理渠道/只做原装/可含税
NEC
24+
TO-252
9800
一级代理/全新原装现货/长期供应!
RENESAS/瑞萨
2025+
TO252
5000
原装进口价格优 请找坤融电子!
NEC
24+
TO-252
8866
VBsemi
24+
TO252
9000
只做原装正品 有挂有货 假一赔十
NEC
25+
TO-252
310
全新原装正品支持含税
NEC
23+
SOT252
7000
VBsemi(台湾微碧)
2447
TO-252
105000
2500个/圆盘一级代理专营品牌!原装正品,优势现货,

2SJ601-Z数据表相关新闻