位置：首页 > IC中文资料第6788页 > 2SJ600
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ600 | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ600 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = –10 V, ID = –13 A) RDS(on)2 = 79 mΩ MAX. (VGS = –4.0 V, ID = –13 A) • Low Ciss: Ciss = 1900 pF TYP. • Built- | NEC 瑞萨 |   | |
2SJ600 | MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ600 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = –10 V, ID = –13 A) RDS(on)2 = 79 mΩ MAX. (VGS = –4.0 V, ID = –13 A) • Low in | RENESAS 瑞萨 | | |
2SJ600 | MOS Field Effect Transistor 文件：51.19 Kbytes Page：2 Pages | KEXIN 科信电子 | | |
2SJ600 | P-Channel 60 V (D-S) MOSFET 文件：993.54 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ600 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = –10 V, ID = –13 A) RDS(on)2 = 79 mΩ MAX. (VGS = –4.0 V, ID = –13 A) • Low Ciss: Ciss = 1900 pF TYP. • Built- | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ600 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = –10 V, ID = –13 A) RDS(on)2 = 79 mΩ MAX. (VGS = –4.0 V, ID = –13 A) • Low in | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET 文件：247.04 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
P-Channel MOSFET 文件：964.47 Kbytes Page：2 Pages | KEXIN 科信电子 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
P-Channel MOSFET 文件：964.47 Kbytes Page：2 Pages | KEXIN 科信电子 | | ||
P-Channel 60 V (D-S) MOSFET 文件：1.73379 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANSISTOR 分立半导体产品 晶体管 - FET，MOSFET - 单个 | ETC 知名厂家 | ETC | | |
Power MOSFETs | RENESAS 瑞萨 | |
2SJ600产品属性
- 类型
描述
- 型号
2SJ600
- 制造商
KEXIN
- 制造商全称
Guangdong Kexin Industrial Co.,Ltd
- 功能描述
MOS Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
25+23+ |
TO251 |
73152 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
RENESAS/瑞萨 |
22+ |
TO252-2 |
8000 |
原装正品支持实单 |
|||
NEC |
24+ |
TO-251 |
2000 |
||||
VBsemi |
24+ |
TO252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS |
19+ |
TO-251 |
34580 |
||||
NEC |
25+ |
TO-252 |
2000 |
全新原装正品支持含税 |
|||
RENESAS |
24+ |
TO252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
23+ |
SOT252 |
7000 |
||||
NEC |
2447 |
TO-251 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
NEC(日电电子) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
2SJ600规格书下载地址
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2019-10-30
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