SWITCHING

P-CHANNEL POWER MOS FET

DESCRIPTION

The 2SJ600 is P-channel MOS Field Effect Transistor designed

for solenoid, motor and lamp driver.

FEATURES

• Low on-state resistance:

RDS(on)1 = 50 mΩ MAX. (VGS = –10 V, ID = –13 A)

RDS(on)2 = 79 mΩ MAX. (VGS = –4.0 V, ID = –13 A)

• Low input capacitance:

Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V)

• Built-in gate protection diode

• TO-251/TO-252 package