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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon P Channel MOS FET High Speed Switching Features • Low on-resistance RDS = 1.1 Ω typ. (VGS = -10 V , ID = -150 mA) RDS = 2.2 Ω typ. (VGS = -4 V , ID = -150 mA) • 4 V gate drive device. • Small package (MPAK) | HitachiHitachi Semiconductor 日立日立公司 |   | ||
Silicon P Channel MOS FET High Speed Switching Features • Low on-resistance RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA) RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA) • 4 V gate drive device. • Small package (MPAK) | RENESAS 瑞萨 | | ||
P-Channel 60 V (D-S) MOSFET 文件：980.15 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 60 V (D-S) MOSFET 文件：980.18 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
12250 |
原装现货,当天可交货,原型号开票 |
|||
HIT |
24+ |
SOT23 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
HIT |
24+ |
SOT-23 |
20000 |
||||
HITACHI/日立 |
25+ |
SOT23 |
860000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
23+ |
SOT-23 |
30000 |
原装正品,假一罚十 |
|||
RENESAS/瑞萨 |
新年份 |
MPAKSC-59 |
85000 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
|||
RENESAS/瑞萨 |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
HIT |
19+ |
SOT23 |
20000 |
20000 |
|||
SANYO |
2023+ |
SOT-23 |
50000 |
原装现货 |
2SJ574BPTL-E芯片相关品牌
2SJ574BPTL-E规格书下载地址
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2SJ574BPTL-E数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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