位置：首页 > IC中文资料第2297页 > 2SJ545(E)
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching | HitachiHitachi Semiconductor 日立日立公司 |   | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | |
2SJ545(E)产品属性
- 类型
描述
- 型号
2SJ545(E)
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
25+23+ |
New |
34749 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
RENESAS |
2511 |
TO220 |
5625 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
RENESAS/瑞萨 |
23+ |
TO-220F |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
HITACHI/日立 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
HIT |
24+ |
TO-220F |
20000 |
||||
R |
24+ |
TO-220FM |
5000 |
只做原装公司现货 |
|||
RENESAS |
23+ |
TO220 |
5625 |
全新原装正品现货,支持订货 |
|||
HIT |
24+ |
NA |
4000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
日立 |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
2SJ545(E)规格书下载地址
2SJ545(E)参数引脚图相关
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- 5000
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- 2SJ550L
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- 2SJ529L
- 2SJ529
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2019-10-30
DdatasheetPDF页码索引
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