位置：首页 > IC中文资料第6242页 > 2SJ539
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ539 | Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features · Low on-resistance RDS(on) = 0.16 Wtyp. · Low drive current · 4 V gete drive devices · High speed switching | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ539 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.16 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | |
2SJ539 | Silicon P Channel MOS FET High Speed Power Switching | HITACHIHitachi Semiconductor 日立日立公司 | | |
2SJ539 | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.16 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：107.62 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SJ539产品属性
- 类型
描述
- 型号
2SJ539
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESA |
24+ |
TO-220 |
16900 |
原装正品现货支持实单 |
|||
24+ |
75000 |
||||||
RENESAS |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
VBsemi/台湾微碧 |
25+ |
TO220 |
30000 |
代理全新原装现货,价格优势 |
|||
RENESAS |
05+ |
TO-220 |
2621 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
2023+ |
TO-220 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
RENESAS/瑞萨 |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
|||
RENESAS/瑞萨 |
24+ |
TO-220 |
60000 |
||||
RENESA |
2511 |
TO-220 |
9403 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
2SJ539规格书下载地址
2SJ539参数引脚图相关
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2019-10-30
DdatasheetPDF页码索引
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