位置：首页 > IC中文资料第1185页 > 2SJ539-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ539-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.16 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.16 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features · Low on-resistance RDS(on) = 0.16 Wtyp. · Low drive current · 4 V gete drive devices · High speed switching | HitachiHitachi Semiconductor 日立日立公司 | |
2SJ539-E产品属性
- 类型
描述
- 型号
2SJ539-E
- 制造商
Renesas Electronics Corporation
- 制造商
Renesas Electronics Corporation
- 功能描述
Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) TO-220AB Box
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESA |
2023+ |
TO-220 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
SONY/索尼 |
24+ |
NA/ |
3986 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
HITACHI/日立 |
23+ |
TO-220 |
2035880 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
HIT |
24+ |
NA |
4000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
VBsemi/台湾微碧 |
25+ |
TO220 |
30000 |
代理全新原装现货,价格优势 |
|||
HIT |
24+ |
TO-220AB |
20000 |
||||
HIT |
23+ |
TO252 |
5000 |
原装正品,假一罚十 |
|||
RENESAS/瑞萨 |
20+ |
TO-220 |
32500 |
现货很近!原厂很远!只做原装 |
2SJ539-E芯片相关品牌
2SJ539-E规格书下载地址
2SJ539-E参数引脚图相关
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2019-10-30
DdatasheetPDF页码索引
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