位置：首页 > IC中文资料第6252页 > 2SJ535
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ535 | Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SJ535 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | |
2SJ535 | isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -30A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 37mΩ(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
2SJ535 | Silicon P Channel MOS FET High Speed Power Switching | HitachiHitachi Semiconductor 日立日立公司 | | |
2SJ535 | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：108.62 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SJ535产品属性
- 类型
描述
- 型号
2SJ535
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
2511 |
TO-220F |
347 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
RENESAS |
20+ |
TO-220F |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
日立 |
24+ |
TO-220F |
27500 |
原装正品,价格最低! |
|||
TOSHIBA/东芝 |
22+ |
TO-92 |
12245 |
现货,原厂原装假一罚十! |
|||
TOSHIBA |
23+ |
TO-92L |
3000 |
原装正品假一罚百!可开增票! |
|||
TOS |
1922+ |
TO-92L |
3000 |
绝对进口原装现货 |
|||
TOSHIBA/东芝 |
2447 |
TO-92 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RENESAS/瑞萨 |
20+ |
TO-220F |
32500 |
现货很近!原厂很远!只做原装 |
|||
RENESAS/瑞萨 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
HIT |
24+ |
TO-220F |
20000 |
2SJ535规格书下载地址
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2019-10-30
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