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型号 功能描述 生产厂家 企业 LOGO 操作
2SJ535

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

2SJ535

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

2SJ535

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -30A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 37mΩ(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SJ535

Silicon P Channel MOS FET High Speed Power Switching

HITACHIHitachi Semiconductor

日立日立公司

2SJ535

Power MOSFETs

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:108.62 Kbytes Page:10 Pages

RENESAS

瑞萨

2SJ535产品属性

  • 类型

    描述

  • 封装类型:

    TO-220FM

  • Nch/Pch:

    Pch

  • 通道数:

    Single

  • VDSS (V) 最大值:

    -60

  • ID (A):

    -30

  • RDS (ON)(mΩ) 最大值@4V或4.5V:

    55

  • RDS (ON)(mΩ) 最大值@10V或8V:

    37

  • Ciss (pF) 典型值:

    2500

  • Vgs (off) (V) 最大值:

    -2

  • VGSS (V):

    20

  • Pch (W):

    35

  • 应用:

    Industrial

  • 安装类型:

    Through Hole

更新时间:2026-5-24 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HIT
24+
TO-220F
20000
RENESAS
17+
TO-220F
6200
100%原装正品现货
NEC
26+
X2SON-4
86720
全新原装正品价格最实惠 假一赔百
Renesas(瑞萨)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
RENESAS
20+
TO-220F
36900
原装优势主营型号-可开原型号增税票
RENESAS
1932+
TO-220F
227
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
24+
TO-220F
16900
原装正品现货支持实单
RENESAS
2023+
TO-220F
8800
正品渠道现货 终端可提供BOM表配单。
HITACHI/日立
17+
TO-220
31518
原装正品 可含税交易

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