位置：首页 > IC中文资料第1185页 > 2SJ535-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ535-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 |   | |
isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -30A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 37mΩ(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | |
2SJ535-E产品属性
- 类型
描述
- 型号
2SJ535-E
- 制造商
Renesas Electronics Corporation
- 功能描述
Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) TO-220FM Box
- 制造商
Renesas Electronics Corporation
- 功能描述
Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) TO-220FM Box Cut Tape
- 制造商
Renesas Electronics Corporation
- 功能描述
Pch MOSFET,60V,30A,28m ohm,TO-220FM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
21+ |
TO-92 |
1709 |
||||
TOSHIBA/东芝 |
24+ |
TO-92 |
880000 |
明嘉莱只做原装正品现货 |
|||
TOSHIBA/东芝 |
24+ |
TO-92 |
54000 |
郑重承诺只做原装进口现货 |
|||
RENESAS |
2023+ |
TO-220F |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
TOSHIBA/东芝 |
24+ |
NA/ |
9839 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
RENESAS |
2450+ |
TO-220F |
18500 |
只做原厂原装正品终端客户免费申请样品 |
|||
PAN |
24+ |
SOT-323 |
4000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
Sanyo |
25+23+ |
To-252 |
32720 |
绝对原装正品全新进口深圳现货 |
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2SJ535-E规格书下载地址
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2019-10-30
DdatasheetPDF页码索引
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