位置：首页 > IC中文资料第1185页 > 2SJ535-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ535-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 |   | |
isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -30A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 37mΩ(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | |
2SJ535-E产品属性
- 类型
描述
- 型号
2SJ535-E
- 制造商
Renesas Electronics Corporation
- 功能描述
Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) TO-220FM Box
- 制造商
Renesas Electronics Corporation
- 功能描述
Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) TO-220FM Box Cut Tape
- 制造商
Renesas Electronics Corporation
- 功能描述
Pch MOSFET,60V,30A,28m ohm,TO-220FM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
26+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
SOT-323 |
25+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
Panasonic-SSG |
24+ |
Mini3P |
7500 |
||||
SING |
25+ |
100 |
公司优势库存 热卖中! |
||||
PANASONIC/松下 |
22+ |
SOT-323 |
20000 |
只做原装 |
|||
Panasonic Electronic Component |
22+ |
SC70 SOT323 |
9000 |
原厂渠道,现货配单 |
|||
PANASONIC/松下 |
24+ |
SOT-323 |
9600 |
原装现货,优势供应,支持实单! |
|||
Panasonic |
16+ |
SOT323 |
89000 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
|||
Panasonic |
20+ |
SOT323 |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
Renesas(瑞萨) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
2SJ535-E规格书下载地址
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DdatasheetPDF页码索引
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