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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 |   | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：114.53 Kbytes Page：11 Pages | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
TO252-2 |
8000 |
原装正品支持实单 |
|||
RENESAS/瑞萨 |
25+ |
TO252 |
880000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
2450+ |
TO252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
Renesas(瑞萨) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
RENESAS |
2023+ |
null |
1323 |
专注配单,只做原装进口现货 |
|||
HITACHI/日立 |
2025+ |
TO252 |
5000 |
原装进口价格优 请找坤融电子! |
|||
RENESAS |
12+05+PBF |
TO-252 |
2855 |
现货 |
|||
RENESAS/瑞萨 |
22+ |
TO252 |
12245 |
现货,原厂原装假一罚十! |
|||
RENESAS/瑞萨 |
新年份 |
TO252 |
68552 |
一级代理原装正品现货,支持实单! |
|||
RENESAS |
25+23+ |
TO252 |
8124 |
绝对原装正品全新进口深圳现货 |
2SJ530STRL-E芯片相关品牌
2SJ530STRL-E规格书下载地址
2SJ530STRL-E参数引脚图相关
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2019-10-30
DdatasheetPDF页码索引
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