位置：首页 > IC中文资料 > 2SJ530(L)_15
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ530(L)_15 | Silicon P Channel MOS FET 文件：114.53 Kbytes Page：11 Pages | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
TO-251 |
10466 |
只做原装 公司现货库存 |
|||
HITACHI/日立 |
24+ |
NA/ |
3000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS |
23+ |
11+ |
20000 |
全新原装假一赔十 |
|||
HITACHI |
03+ |
TO252 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
20+ |
TO-251 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS/瑞萨 |
22+ |
TO-251 |
100000 |
代理渠道/只做原装/可含税 |
|||
NEC |
25+ |
TO-251 |
996880 |
只做原装,欢迎来电资询 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
24+ |
TO-251 |
4200 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
RENESAS |
24+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
2SJ530(L)_15规格书下载地址
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2019-10-30
DdatasheetPDF页码索引
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