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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 |   | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：114.53 Kbytes Page：11 Pages | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
8373 |
原装现货,当天可交货,原型号开票 |
|||
Renesas(瑞萨) |
24+ |
标准封装 |
7180 |
支持大陆交货,美金交易。原装现货库存。 |
|||
HITACHI |
2016+ |
TO-251 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
RENESAS |
23+ |
SOT252/2.5 |
20000 |
全新原装假一赔十 |
|||
NEC |
25+ |
TO-251 |
996880 |
只做原装,欢迎来电资询 |
|||
RENESAS |
1437+ |
TO-252 |
2952 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
25+ |
TO-252 |
20300 |
RENESAS/瑞萨原装特价2SJ530STL-E即刻询购立享优惠#长期有货 |
|||
RENESAS |
2450+ |
TO252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
RENESAS |
25+ |
300 |
公司现货库存 |
||||
RENESAS/瑞萨 |
25+ |
TO252 |
880000 |
明嘉莱只做原装正品现货 |
2SJ530STR-E芯片相关品牌
2SJ530STR-E规格书下载地址
2SJ530STR-E参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SJ549S
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- 2SJ534-E
- 2SJ534
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- 2SJ530S(TL-E)
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- 2SJ528L
- 2SJ528
- 2SJ527S
- 2SJ527L
- 2SJ527
- 2SJ526
- 2SJ525
- 2SJ522
- 2SJ520
- 2SJ518
- 2SJ517
- 2SJ516
- 2SJ512
2SJ530STR-E数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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