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Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

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RENESAS

瑞萨

更新时间:2025-12-30 14:44:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI
24+
SOT-252
4200
只做原装正品现货 欢迎来电查询15919825718
SANYO/三洋
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
RENESAS
12+05+PBF
TO-252
2855
现货
RENESAS
23+
SOT252/2.5
20000
全新原装假一赔十
RENESAS/瑞萨
24+
NA/
8373
原装现货,当天可交货,原型号开票
RENESAS
24+
TO-252
9000
只做原装正品 有挂有货 假一赔十
RENESAS
1437+
TO-252
2952
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS/瑞萨
23+
TO-252
28800
HITACHI
1922+
SOT-252
35689
原装进口现货库存专业工厂研究所配单供货
HIATCHI
24+
TO-252
3253

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