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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ530(L)/(S) | Silicon P-Channel MOS FET | HitachiHitachi Semiconductor 日立日立公司 |   | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：114.53 Kbytes Page：11 Pages | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
HITACHI/日立 |
2447 |
TO252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RENESAS |
24+ |
TO252 |
16900 |
原装正品现货支持实单 |
|||
RENESAS |
24+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS |
20+ |
TO-251 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
HITACHI |
03+ |
TO252 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
R |
TO-251 |
22+ |
6000 |
十年配单,只做原装 |
|||
RENESAS |
2023+ |
TO-252 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
NEC |
24+ |
TO-251 |
10466 |
只做原装 公司现货库存 |
|||
HITACHI |
23+ |
TO252 |
3000 |
全新原装正品现货,支持订货 |
2SJ530(L)/(S)芯片相关品牌
2SJ530(L)/(S)规格书下载地址
2SJ530(L)/(S)参数引脚图相关
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2SJ530(L)/(S)数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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