位置：首页 > IC中文资料第11057页 > 2SJ517YYTR-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ517YYTR-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –4 V, ID = –1 A) • Low drive current • High speed switching • 2.5 V gate drive devices. | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.18 Ω typ. (at VGS =–4V, ID =–1A) • Low drive current • High speed switching • 2.5V gate drive devices. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –4 V, ID = –1 A) • Low drive current • High speed switching • 2.5 V gate drive devices. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –4 V, ID = –1 A) • Low drive current • High speed switching • 2.5 V gate drive devices. | RENESAS 瑞萨 | |
2SJ517YYTR-E产品属性
- 类型
描述
- 型号
2SJ517YYTR-E
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
23+ |
SOT-89 |
9000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
SOT-89 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
RENESAS |
24+ |
SOT89 |
5500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
RENESAS/瑞萨 |
25+ |
SOT-89 |
880000 |
明嘉莱只做原装正品现货 |
|||
HITACHI |
25+ |
SOT89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
Bychip/百域芯 |
21+ |
SOT89 |
30000 |
优势供应 品质保障 可开13点发票 |
|||
RENSAS |
25+23+ |
SMD |
36583 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
24+ |
SOT89 |
96000 |
公司大量原装现货,欢迎来电 |
|||
SANYO |
24+ |
60000 |
|||||
VBsemi |
24+ |
SOT89-3 |
9000 |
只做原装正品 有挂有货 假一赔十 |
2SJ517YYTR-E规格书下载地址
2SJ517YYTR-E参数引脚图相关
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2SJ517YYTR-E数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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