位置：首页 > IC中文资料第1934页 > 2SJ517YYTL-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ517YYTL-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –4 V, ID = –1 A) • Low drive current • High speed switching • 2.5 V gate drive devices. | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.18 Ω typ. (at VGS =–4V, ID =–1A) • Low drive current • High speed switching • 2.5V gate drive devices. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –4 V, ID = –1 A) • Low drive current • High speed switching • 2.5 V gate drive devices. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –4 V, ID = –1 A) • Low drive current • High speed switching • 2.5 V gate drive devices. | RENESAS 瑞萨 | |
2SJ517YYTL-E产品属性
- 类型
描述
- 型号
2SJ517YYTL-E
- 制造商
Renesas Electronics
- 功能描述
Trans MOSFET P-CH 20V 2A 4-Pin(3+Tab) UPAK T/R Cut Tape
- 制造商
Renesas Electronics Corporation
- 功能描述
Pch MOSFET,20V,2A,0.18ohm,UPAK
- 制造商
Renesas
- 功能描述
Trans MOSFET P-CH 20V 2A 4-Pin(3+Tab) UPAK T/R
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
24+ |
标准封装 |
17048 |
支持大陆交货,美金交易。原装现货库存。 |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
362 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS |
2016+ |
SOT89 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
RENESAS/瑞萨 |
22+ |
SOT89 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
25+ |
原装 |
32000 |
RENESAS/瑞萨全新特价2SJ517YYTL-E即刻询购立享优惠#长期有货 |
|||
RENESAS |
25+ |
SOT89 |
2650 |
原装优势!绝对公司现货 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS/瑞萨 |
23+ |
SOT-89 |
785934 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
SOT-89 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
RENESAS/瑞萨 |
2450+ |
SOT-89 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
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2SJ517YYTL-E规格书下载地址
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DdatasheetPDF页码索引
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