型号 功能描述 生产厂家 企业 LOGO 操作

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

2SJ505S-E产品属性

  • 类型

    描述

  • 型号

    2SJ505S-E

  • 制造商

    Renesas Electronics

  • 功能描述

    Trans MOSFET P-CH 60V 50A 3-Pin(2+Tab) LDPAK(S)-(1) Tray

  • 制造商

    Renesas

  • 功能描述

    Trans MOSFET P-CH 60V 50A 3-Pin(2+Tab) LDPAK(S)-(1)

更新时间:2026-3-16 16:49:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
25+23+
TO-263
14113
绝对原装正品全新进口深圳现货
VBSEMI/微碧半导体
24+
TO263
7800
全新原厂原装正品现货,低价出售,实单可谈
RENESAS
24+
SOT252
97000
RENESAS/瑞萨
22+
TO-263
20000
公司只有原装 品质保证
RENESA
25+
TO263
9800
全新原装现货,假一赔十
RENESAS
14+
TO263
351
全新 发货1-2天
RENESAS/瑞萨
24+
TO-263
47186
郑重承诺只做原装进口现货
RENESAS
17+
TO-263
6200
100%原装正品现货
NEC
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
Renesas(瑞萨)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持

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