Silicon P-Channel MOS FET

Features • Low on-resistance. • Low drive power • High speed switching • 2.5 V gate drive device. Application High speed power switching

Silicon P-Channel MOS FET

Features • Low on-resistance. • Low drive power • 2.5 V gate drive device. • Small package (MPAK). Application Low frequency power switching

Silicon P Channel MOS FET

Description Low frequency power switching Features • Low on-resistance. • Low drive power • 2.5 V gate drive device. • Small package (MPAK).

Silicon P Channel MOS FET

Description Low frequency power switching Features • Low on-resistance. • Low drive power • 2.5 V gate drive device. • Small package (MPAK).

Silicon P Channel MOS FET

Description Low frequency power switching Features • Low on-resistance. • Low drive power • 2.5 V gate drive device. • Small package (MPAK).

Silicon P-Channel MOS FET

Features • Low on-resistance. • Low drive power • 2.5 V gate drive device. • Small package (MPAK). Application Low frequency power switching

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-state resistance. • High-speed switching. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ455-applied equipment. • High density surface mount applica

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • High-speed diode incorporated. • Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package.

P CHANNEL MOS SILICON TRANSISTOR

P CHANNEL MOS SILICON TRANSISTOR

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • High-speed diode incorporated.

P-Channel 60 V (D-S) MOSFET

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Silicon P-Channel MOS FET

General-Purpose Switching Device Applications

Ultrahigh-Speed Switching Applications