位置：首页 > IC中文资料第7762页 > 2SJ350-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ350-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 |   | |
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter Application High speed power switching Features • Low on-resistance • High speed switc | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -6A@ TC=25℃ · Drain Source Voltage -VDSS= -120V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.7Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
P-Channel 100 V (D-S) MOSFET 文件：1.61947 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | |
2SJ350-E产品属性
- 类型
描述
- 型号
2SJ350-E
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
25+ |
TO-3P |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
RENESAS/瑞萨 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
HITACHI |
25+ |
TO-3P |
27500 |
原装正品,价格最低! |
|||
HITACHI |
22+ |
TO-3P |
20000 |
公司只有原装 品质保证 |
|||
RENESAS/瑞萨 |
TO-3P |
22+ |
6000 |
十年配单,只做原装 |
|||
NEC |
24+ |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
24+ |
2000 |
||||||
NEC |
24+ |
6540 |
原装现货/欢迎来电咨询 |
||||
HITACHI |
2023+ |
3000 |
进口原装现货 |
||||
VBSEMI/台湾微碧 |
24+ |
TO-220FM |
60000 |
全新原装现货 |
2SJ350-E规格书下载地址
2SJ350-E参数引脚图相关
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2019-10-30
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