Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter Application High speed power switching Features • Low on-resistance • High speed switc

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -6A@ TC=25℃ · Drain Source Voltage -VDSS= -120V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.7Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon P-Channel MOS FET

Description\nHigh speed power switching • Low on-resistance\n• High speed switching\n• Low drive current\n• 4 V gate drive device can be driven from 5 V source\n• Suitable for switching regulator, DC-DC converter;

P-Channel 100 V (D-S) MOSFET

文件：1.61947 Mbytes Page：7 Pages

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter

丝印代码：PD；P-Channel MOSFET

文件：523.87 Kbytes Page：4 Pages