位置：首页 > IC中文资料第6257页 > 2SJ222-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ222-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device -Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 |   | |
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device -Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | |
2SJ222-E产品属性
- 类型
描述
- 型号
2SJ222-E
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
482 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
24+ |
66000 |
|||||
NEC |
22+ |
SOT252 |
20000 |
公司只有原装 品质保证 |
|||
RENESAS/瑞萨 |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
HITACHI |
1922+ |
TO-220F |
452 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
2023+ |
SOT252 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
HITACHI/日立 |
TO-252 |
22+ |
6000 |
十年配单,只做原装 |
|||
HITACHI |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
23+ |
SOT252 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
HITACHI/日立 |
23+ |
TO220F |
50000 |
全新原装正品现货,支持订货 |
2SJ222-E规格书下载地址
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2019-10-30
DdatasheetPDF页码索引
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