Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device -Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -20A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= -10V APPLICATIONS · High Speed Power Switching

Silicon P-Channel MOS FET

Description\nHigh speed power switching • Low on-resistance\n• High speed switching\n• Low drive current\n• 4 V gate drive device\n   -Can be driven from 5 V source\n• Suitable for motor drive, DC-DC converter, power switch and solenoid drive;

Silicon P-Channel MOS FET

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device -Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive