MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOSFET FOR SWITCHING The 2SJ210, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SJ210 has excellent switching characteristics and is suitable as a high-speed switching device in digital circuits.

MOS Fied Effect Transistor

Features ● Directly driven by Ics having a 5V poer supply. ● Not necessary to consider driving current because of its high input impedance. ● Possible to reduce the number of parts by omitting the biasresistor.

P-CHANNEL MOSFET FOR SWITCHING

Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features ● Directly driven by a 4.5 V power source. ● Low on-state resistance RDS(on)1 = 2.7  MAX. (VGS = -10 V, ID = -100 mA)

P-CHANNEL MOSFET FOR SWITCHING

Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features ● Directly driven by a 4.5 V power source. ● Low on-state resistance RDS(on)1 = 2.7  MAX. (VGS = -10 V, ID = -100 mA)

P-CHANNEL MOSFET FOR SWITCHING

Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features ● Directly driven by a 4.5 V power source. ● Low on-state resistance RDS(on)1 = 2.7  MAX. (VGS = -10 V, ID = -100 mA)

P-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3  • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Compliant to RoHS Directive 2002/95/EC

P-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Ultra Low On-Resistance • Small Size APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies

MOS Fied Effect Transistor

■ Features ● VDS (V) =-100V ● ID =-0.2 A ● RDS(ON)

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOSFET FOR SWITCHING The 2SJ211, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SJ211 has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators

P-Channel MOSFET

■ Features ● VDS (V) =-100V ● ID =-0.2 A ● RDS(ON)

P-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Ultra Low On-Resistance • Small Size APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies

MOS Fied Effect Transistor

■ Features ● VDS (V) =-60V ● ID =-500m A ● RDS(ON)

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING

P-Channel Power MOSFET

DESCRIPTION ·Drain Current –ID= -45A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 42mΩ(Max) ·High speed switching APPLICATIONS ·High speed power switching

Silicon P-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Silicon P-Channel MOS FET

Features ● Low on-resistance ● High speed switching ● 4 V gate drive device - Can be driven from 5 V source ● Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

P-CHANNEL MOS FET FOR SWITCHING

文件：365.61 Kbytes Page：6 Pages

P-Channel MOSFET

文件：998.18 Kbytes Page：3 Pages

P-Channel MOSFET

文件：998.18 Kbytes Page：3 Pages

P-Channel MOSFET

文件：1.28878 Mbytes Page：3 Pages

Power MOSFETs for Automotive

Power MOSFETs-Power MOSFETs for Automotive

P-CHANNEL MOS FET FOR SWITCHING

文件：394.26 Kbytes Page：6 Pages

P-Channel MOSFET

文件：1.25199 Mbytes Page：3 Pages

P-CHANNEL MOS FET FOR SWITCHING

文件：309.42 Kbytes Page：6 Pages

P-Channel MOSFET

文件：1.33993 Mbytes Page：4 Pages

Power MOSFETs-Power MOSFETs for Automotive

P-CHANNEL MOS FET FOR SWITCHING

文件：304.28 Kbytes Page：6 Pages

MOS Fied Effect Transistor

文件：44.4 Kbytes Page：1 Pages

P-Channel MOSFET

文件：1.05584 Mbytes Page：4 Pages