位置：首页 > IC中文资料第282页 > 2SJ217-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ217-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 |   | |
P-Channel Power MOSFET DESCRIPTION ·Drain Current –ID= -45A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 42mΩ(Max) ·High speed switching APPLICATIONS ·High speed power switching | ISC 无锡固电 | | ||
Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | |
2SJ217-E产品属性
- 类型
描述
- 型号
2SJ217-E
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HIT |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
HITACHI |
24+ |
NA/ |
358 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS/瑞萨 |
23+ |
417000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
Hitachi |
25+23+ |
To-252 |
30309 |
绝对原装正品全新进口深圳现货 |
|||
HITACHI |
1922+ |
SOT-263 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
HITACHI/日立 |
23+ |
TO-263 |
6000 |
专注配单,只做原装进口现货 |
|||
NEC |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
HITACHI/日立 |
23+ |
to3P |
50000 |
全新原装正品现货,支持订货 |
|||
24+ |
2000 |
||||||
NEC |
24+ |
TO-263 |
5000 |
只做原装公司现货 |
2SJ217-E芯片相关品牌
2SJ217-E规格书下载地址
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2019-10-30
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