Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

Very High-Speed Switching Applications

P-Channel Silicon MOSFET Ultra high-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

MOS FIELD-EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING

P-CHANNEL MOS FET FOR SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

P-CHANNEL MOS FET FOR SWITCHING

P-CHANNEL MOS FET FOR SWITCHING The 2SJ197, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output ICs having a 5V power source. AS the MOS FET has low on-state resistance and excellent switching characteristic, it is suitable for driving actuators such

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING

MOS Fied Effect Transistor

Features ● Directly driven by Ics having a 5V poer supply. ● Has low on-state resistance RDS(on)=1.5 Ω MAX.@VGS=-4.0V,ID=-0.5A RDS(on)=1.0 Ω MAX.@VGS=-10V,ID=-0.5A

P-Channel Enhancement MOSFET

Application | © PWM applications Load switch « Power management

MOS FIELD EEFECT TRANSISTOR |

P-CHANNEL MOS FET FOR SWITCHING

P-CHANNEL MOS FET FOR SWITCHING

P-CHANNEL MOS FET FOR SWITCHING The 2SJ198 is a p-channel vertical type MOS FET switching device which can be directly driven from an IC operating with a 5 V single power supply.

P-CHANNEL MOS FET FOR SWITCHING

The 2SJ199, P-chnnal vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. Features ● Directly driven by ICs having a 5V poer supply. ● Has low on-state resistance RDS(on)=2.5 Ω MAX. @VGS=-4.0 V,ID=-0.5 A RDS(on)=2.0

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING

MOS Fied Effect Transistor

■ Features ● VDS (V) =-100V ● ID =-1 A (VGS =-10V) ● RDS(ON)

P-Channel 60-V (D-S) MOSFET

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Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications

P-Channel 60-V (D-S) MOSFET

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P-Channel MOSFET

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P-Channel MOSFET

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