2SJ13价格

参考价格:¥1.2350

型号:2SJ130 品牌:HITACHI 备注:这里有2SJ13多少钱,2025年最近7天走势,今日出价,今日竞价,2SJ13批发/采购报价,2SJ13行情走势销售排行榜,2SJ13报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Silicon P Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

RENESAS

瑞萨

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

RENESAS

瑞萨

Silicon P Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

RENESAS

瑞萨

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

RENESAS

瑞萨

Silicon P-Channel MOS FET

Silicon P-Channel MOS FET Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators

KEXIN

科信电子

Silicon P Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

RENESAS

瑞萨

MOS FIELD EFFECT POWER TRANSISTOR|

P-CHANNEL POWER MOSFET FOR SWITCHING

RENESAS

瑞萨

MOS FIELD EFFECT POWER TRANSISTOR

P-CHANNEL POWER MOSFET FOR SWITCHING

RENESAS

瑞萨

MOS Field Effect Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

MOS FIELD EFFECT TRANSISTOR

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET FEATURES Suitable for switching power supplies, actuater controls, and pulse circuits 4 V Gate Drive - Logic level - Large current switching : ID(DC)=6A Low RDS(on) No Second Breakdown

NEC

瑞萨

FAST SWITCHING P-CHANNEL SILICON POWER MOS FET

Features Suitable for switching power supplies, actuator controls and pulse circuits 4V Gate Drive ---- Logic Level ----- Large current switching : ID(DC) = 5A Low RDS(on) No Secondary Breakdown

NEC

瑞萨

MOS Field Effect Power Transistors

[Toshiba] MOS Field Effect Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

MOS Field Effect Power Transistors

MOS Field Effect Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

FAST SWITCHING P CHANNEL SILICON POWER MOS FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MOS Field Effect Power Transistors

MOS Field Effect Power Transistor

ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel MOSFET

文件:1.48529 Mbytes Page:4 Pages

KEXIN

科信电子

MOS Field Effect Power Transistors

文件:90.12 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel 30-V (D-S) MOSFET

文件:1.01505 Mbytes Page:9 Pages

VBSEMI

微碧半导体

MOS electric field effect power transistor

NEC

瑞萨

FAST SWITCHING P-CHANNEL SILICON POWER MOS FET

RENESAS

瑞萨

Fast switching P-channel silicon power MOS FET.

NEC

瑞萨

P-Channel 100 V (D-S) MOSFET

文件:1.61476 Mbytes Page:7 Pages

VBSEMI

微碧半导体

isc P-Channel MOSFET Transistor

文件:297.26 Kbytes Page:2 Pages

ISC

无锡固电

2SJ13产品属性

  • 类型

    描述

  • 型号

    2SJ13

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon P Channel MOS FET

更新时间:2025-12-25 18:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
5750
原装现货,当天可交货,原型号开票
RENESAS(瑞萨)/IDT
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
NEC
NEW
TO-220F
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
NEC
TO220
1335
全新原装进口自己库存优势
NEC
26+
TO-220F
60000
只有原装,可配单
T
23+
TO
8000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
24+
TO-3
10000
NEC
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
NEC
02+
TO-220F
2500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
24+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!

2SJ13数据表相关新闻