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2SJ13价格
参考价格:¥1.2350
型号:2SJ130 品牌:HITACHI 备注:这里有2SJ13多少钱,2025年最近7天走势,今日出价,今日竞价,2SJ13批发/采购报价,2SJ13行情走势销售排行榜,2SJ13报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon P Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching | RENESAS 瑞萨 | |||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon P Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching | RENESAS 瑞萨 | |||
Silicon P Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching | RENESAS 瑞萨 | |||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon P Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching | RENESAS 瑞萨 | |||
Silicon P-Channel MOS FET Silicon P-Channel MOS FET Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators | KEXIN 科信电子 | |||
Silicon P Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching | RENESAS 瑞萨 | |||
MOS FIELD EFFECT POWER TRANSISTOR| P-CHANNEL POWER MOSFET FOR SWITCHING | RENESAS 瑞萨 | |||
MOS FIELD EFFECT POWER TRANSISTOR P-CHANNEL POWER MOSFET FOR SWITCHING | RENESAS 瑞萨 | |||
MOS Field Effect Power Transistors
| ETCList of Unclassifed Manufacturers 未分类制造商 | |||
MOS FIELD EFFECT TRANSISTOR FAST SWITCHING N-CHANNEL SILICON POWER MOS FET FEATURES Suitable for switching power supplies, actuater controls, and pulse circuits 4 V Gate Drive - Logic level - Large current switching : ID(DC)=6A Low RDS(on) No Second Breakdown | NEC 瑞萨 | |||
FAST SWITCHING P-CHANNEL SILICON POWER MOS FET Features Suitable for switching power supplies, actuator controls and pulse circuits 4V Gate Drive ---- Logic Level ----- Large current switching : ID(DC) = 5A Low RDS(on) No Secondary Breakdown | NEC 瑞萨 | |||
MOS Field Effect Power Transistors [Toshiba] MOS Field Effect Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
MOS Field Effect Power Transistors MOS Field Effect Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
FAST SWITCHING P CHANNEL SILICON POWER MOS FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |||
MOS Field Effect Power Transistors MOS Field Effect Power Transistor | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
P-Channel MOSFET 文件:1.48529 Mbytes Page:4 Pages | KEXIN 科信电子 | |||
MOS Field Effect Power Transistors 文件:90.12 Kbytes Page:2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
P-Channel 30-V (D-S) MOSFET 文件:1.01505 Mbytes Page:9 Pages | VBSEMI 微碧半导体 | |||
MOS electric field effect power transistor | NEC 瑞萨 | |||
FAST SWITCHING P-CHANNEL SILICON POWER MOS FET | RENESAS 瑞萨 | |||
Fast switching P-channel silicon power MOS FET. | NEC 瑞萨 | |||
P-Channel 100 V (D-S) MOSFET 文件:1.61476 Mbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
isc P-Channel MOSFET Transistor 文件:297.26 Kbytes Page:2 Pages | ISC 无锡固电 |
2SJ13产品属性
- 类型
描述
- 型号
2SJ13
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
5750 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
NEC |
NEW |
TO-220F |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
NEC |
TO220 |
1335 |
全新原装进口自己库存优势 |
||||
NEC |
26+ |
TO-220F |
60000 |
只有原装,可配单 |
|||
T |
23+ |
TO |
8000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
TO-3 |
10000 |
|||||
NEC |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
NEC |
02+ |
TO-220F |
2500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
24+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
2SJ13芯片相关品牌
2SJ13规格书下载地址
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2SJ13数据表相关新闻
2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E 原装正品 现货供应
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2023-2-22SK1485-T1
2SK1485-T1,当天发货0755-82732291全新原装现货或门市自取.
2020-9-122SK1985
2SK1985,全新原装当天发货或门市自取0755-82732291.
2019-10-30
DdatasheetPDF页码索引
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