位置：首页 > IC中文资料第6242页 > 2SJ130S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ130S | Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ130S | Silicon P Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching | RENESAS 瑞萨 | | |
2SJ130S | Silicon P-Channel MOS FET Silicon P-Channel MOS FET Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators | KEXIN 科信电子 | | |
Silicon P Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching | RENESAS 瑞萨 | | ||
P-Channel MOSFET 文件：1.48529 Mbytes Page：4 Pages | KEXIN 科信电子 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching | RENESAS 瑞萨 | |
2SJ130S产品属性
- 类型
描述
- 型号
2SJ130S
- 制造商
KEXIN
- 制造商全称
Guangdong Kexin Industrial Co.,Ltd
- 功能描述
Silicon P-Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
2450+ |
SOT252 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS/瑞萨 |
23+ |
TO-251 |
33226 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
POWER |
23+ |
TO252 |
6000 |
专注配单,只做原装进口现货 |
|||
RENESAS |
24+ |
51420 |
|||||
HITACHI |
2023+ |
TO-252 |
50000 |
原装现货 |
|||
AD |
25+ |
TO-252 |
3000 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十 |
|||
RENESAS |
24+ |
SOT252 |
3100 |
只做原装正品现货 欢迎来电查询15919825718 |
2SJ130S规格书下载地址
2SJ130S参数引脚图相关
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2019-10-30
DdatasheetPDF页码索引
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