型号 功能描述 生产厂家 企业 LOGO 操作
2SJ130S

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

HITACHIHitachi Semiconductor

日立日立公司

2SJ130S

Silicon P Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

RENESAS

瑞萨

2SJ130S

Silicon P-Channel MOS FET

Silicon P-Channel MOS FET Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators

KEXIN

科信电子

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

RENESAS

瑞萨

Silicon P Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

RENESAS

瑞萨

P-Channel MOSFET

文件:1.48529 Mbytes Page:4 Pages

KEXIN

科信电子

Silicon P Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

RENESAS

瑞萨

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

RENESAS

瑞萨

2SJ130S产品属性

  • 类型

    描述

  • 型号

    2SJ130S

  • 制造商

    KEXIN

  • 制造商全称

    Guangdong Kexin Industrial Co.,Ltd

  • 功能描述

    Silicon P-Channel MOS FET

更新时间:2026-3-1 21:25:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
25+23+
To-252
31168
绝对原装正品全新进口深圳现货
RENESAS/瑞萨
22+
SOT252
100000
代理渠道/只做原装/可含税
NEC
2026+
TO252
54648
百分百原装现货 实单必成 欢迎询价
NEC
24+
TO252
990000
明嘉莱只做原装正品现货
RENESAS
24+
51420
NEC
07+
TO251
998
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
NEC
18+
TO-252
85600
保证进口原装可开17%增值税发票
TOSHIBA/东芝
2447
SOT252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
NEC
06+
40
优势货源原装正品

2SJ130S数据表相关新闻