型号 功能描述 生产厂家 企业 LOGO 操作
2SJ130S

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

2SJ130S

Silicon P Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

RENESAS

瑞萨

2SJ130S

Silicon P-Channel MOS FET

Silicon P-Channel MOS FET Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators

KEXIN

科信电子

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

RENESAS

瑞萨

Silicon P Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

RENESAS

瑞萨

P-Channel MOSFET

文件:1.48529 Mbytes Page:4 Pages

KEXIN

科信电子

Silicon P Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

RENESAS

瑞萨

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

RENESAS

瑞萨

2SJ130S产品属性

  • 类型

    描述

  • 型号

    2SJ130S

  • 制造商

    KEXIN

  • 制造商全称

    Guangdong Kexin Industrial Co.,Ltd

  • 功能描述

    Silicon P-Channel MOS FET

更新时间:2025-12-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
16000
优势代理渠道,原装正品,可全系列订货开增值税票
NEC
25+
TO252
54648
百分百原装现货 实单必成 欢迎询价
RENESAS/瑞萨
22+
SOT252
100000
代理渠道/只做原装/可含税
NEC
24+
TO252
990000
明嘉莱只做原装正品现货
RENESAS
24+
SOT252
3100
只做原装正品现货 欢迎来电查询15919825718
NEC
22+
TO251
20000
公司只有原装 品质保证
SONY
NEW
TO-3P
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
NEC
23+
TO-251
4000
专做原装正品,假一罚百!
RENESAS/瑞萨
2450+
SOT252
8850
只做原装正品假一赔十为客户做到零风险!!
NEC
25+23+
To-252
31168
绝对原装正品全新进口深圳现货

2SJ130S数据表相关新闻