NPN EPITAXIAL TRANSISTOR

DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) * High Power Dissipation: PC=30W (TA=25°C) * Complementary to 2SB834

POWER TRANSISTORS(3A,60V,30W)

NPN SILICON POWER TRANSISTORS ... designed for use in audio frequency power amplifier applications

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for low frequency power amplifier applications.

NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

Complement to 2SB834

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.5 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃